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7006L20JB

Description
Dual-Port SRAM, 16KX8, 20ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68
Categorystorage   
File Size174KB,20 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

7006L20JB Overview

Dual-Port SRAM, 16KX8, 20ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68

7006L20JB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeLCC
package instructionQCCJ, LDCC68,1.0SQ
Contacts68
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time20 ns
I/O typeCOMMON
JESD-30 codeS-PQCC-J68
JESD-609 codee0
length24.2062 mm
memory density131072 bit
Memory IC TypeDUAL-PORT SRAM
memory width8
Humidity sensitivity level1
Number of functions1
Number of ports2
Number of terminals68
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC68,1.0SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Filter levelMIL-PRF-38535
Maximum seat height4.572 mm
Maximum standby current0.004 A
Minimum standby current2 V
Maximum slew rate0.32 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width24.2062 mm
Base Number Matches1
HIGH-SPEED
16K x 8 DUAL-PORT
STATIC RAM
Features
IDT7006S/L
Functional Block Diagram
OE
L
CE
L
R/W
L
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Military: 20/25/35/55/70ns (max.)
– Industrial: 55ns (max.)
– Commercial: 15/17/20/25/35/55ns (max.)
Low-power operation
– IDT7006S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7006L
Active: 700mW (typ.)
Standby: 1mW (typ.)
IDT7006 easily expands data bus width to 16 bits or more
using the Master/Slave select when cascading more than
one device
M/S = H for
BUSY
output flag on Master,
M/S = L for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Devices are capable of withstanding greater than 2001V
electrostatic discharge
Battery backup operation—2V data retention
TTL-compatible, single 5V (±10%) power supply
Available in 68-pin PGA, quad flatpack, PLCC, and a 64-pin
TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
OE
R
CE
R
R/W
R
I/O
0L
- I/O
7L
I/O
Control
BUSY
L
A
12L
A
0L
(1,2)
I/O
0R
-I/O
7R
I/O
Control
BUSY
R
Address
Decoder
13
(1,2)
MEMORY
ARRAY
13
Address
Decoder
A
12R
A
0R
CE
L
OE
L
R/W
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
L
(2)
INT
L
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull.
M/S
SEM
R
INT
R
(2)
2738 drw 01
OCTOBER 2008
1
DSC- 2739/16
©2008 Integrated Device Technology, Inc.
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