DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
•
Very low intermodulation distortion
•
High power gain
•
Excellent wideband properties and
low noise up to high frequencies
due to its very high transition
frequency.
APPLICATIONS
•
RF wideband amplifiers and
oscillators.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F
d
im
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
intermodulation distortion
T
s
≤
95
°C
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
j
= 25
°C
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 30 mA; V
CE
= 5 V; R
L
= 75
Ω;
V
O
= 300 mV; f
p
+ f
q
−
f
r
= 493.25 MHz;
T
amb
= 25
°C
open emitter
open base
CONDITIONS
−
−
−
−
0.8
5
16.5
1.9
−60
TYP.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
page
BFR93
3
1
Top view
Marking code:
R1p.
2
MSB003
Fig.1 SOT23.
MAX.
15
12
35
300
−
−
−
−
−
V
V
UNIT
mA
mW
pF
GHz
dB
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
95
°C;
note 1
open emitter
open base
open collector
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
15
12
2
35
300
+150
175
V
V
V
mA
mW
°C
°C
UNIT
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F
d
im
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
2. Die mounted in a SOT37 package (BFR91).
3. I
C
= 30 mA; V
CE
= 5 V; R
L
= 75
Ω;
VSWR
<
2; T
amb
= 25
°C;
V
p
= V
O
= 300 mV at f
p
= 495.25 MHz;
V
q
= V
O
−6
dB at f
q
= 503.25 MHz;
V
r
= V
O
−6
dB at f
r
= 505.25 MHz;
measured at f
p
+ f
q
−
f
r
= 493.25 MHz.
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure (note 2)
intermodulation distortion
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 30 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz;
Z
S
= opt.; T
amb
= 25
°C
note 3
MIN.
−
40
−
−
−
−
−
−
−
TYP.
−
90
0.7
1.8
0.8
5
16.5
1.9
−60
PARAMETER
CONDITIONS
VALUE
260
BFR93
UNIT
K/W
thermal resistance from junction to soldering point T
s
≤
95
°C;
note 1
MAX. UNIT
50
−
−
−
−
−
−
−
−
pF
pF
pF
GHz
dB
dB
dB
nA
S
21
=
10 log ------------------------------------------------------------- dB
-
2
2
1
–
S
11
1
–
S
22
2
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
MBG246
400
handbook, halfpage
handbook, halfpage
+24
V
390
Ω
L3
560
Ω
1.2 k
Ω
240
Ω
L2
L1
680 pF
680 pF
75
Ω
output
Ptot
(mW)
300
200
75
Ω
input
680 pF
DUT
100
16
Ω
MEA454
0
0
L2 = L3 = 5
µH
Ferroxcube choke, catalogue number
3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal
diameter 4 mm.
50
100
150
Ts
(
o
C)
200
Fig.2 Intermodulation distortion test circuit.
Fig.3 Power derating curve.
handbook, halfpage
120
MCD087
handbook, halfpage
1
MEA450
Cc
h FE
(pF)
0.8
80
0.6
0.4
40
0.2
0
0
10
20
IC (mA)
30
0
0
4
8
12
16
20
VCB (V)
V
CE
= 5 V; T
j
= 25
°C.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
MEA449
MEA419
handbook, halfpage
6
30
handbook, halfpage
gain
(dB)
20
fT
(GHz)
4
G UM
2
10
I S12 I
2
0
0
10
20
30
I C (mA)
40
0
2
10
10
3
f (MHz)
10
4
V
CE
= 5 V; f = 500 MHz; T
j
= 25
°C.
I
C
= 30 mA; V
CE
= 5 V; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current; typical values.
Fig.7
Gain as a function of frequency;
typical values.
MEA453
10
handbook, halfpage
handbook, halfpage
10
MEA452
F
(dB)
F
(dB)
8
6
5
4
2
0
0
10
20
30
I C (mA)
40
0
10
–1
1
f (GHz)
10
V
CE
= 5 V; f = 500 MHz; Z
S
= opt.; T
amb
= 25
°C.
I
C
= 2 mA; V
CE
= 5 V; Z
S
= opt.; T
amb
= 25
°C.
Fig.8
Minimum noise figure as a function of
collector current; typical values.
Fig.9
Minimum noise figure as a function of
frequency; typical values.
1997 Oct 29
5
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