Bulletin I20262 05/96
8AF SERIES
PRESSFIT RECTIFIER DIODES
Features and Descriptions
Convenient pressfit package
Available with and without leads
High surge capabilities
Fully characterised bulletin
50 A
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
J
8AF
50
150
79
714
747
2546
2324
25455
50 to 400
- 65 to 195
Units
A
°C
A
A
A
A
2
s
A
2
s
A
2
√s
V
o
C
IR Case Style B-47
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1
8AF Series
Bulletin I20262 05/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
05
8AF
1
2
4
V
RRM
, maximum repetitive
peak reverse voltage
V
50
100
200
400
V
RSM
, maximum non-
repetitive peak rev. voltage
V
75
150
300
500
I
RRM
max.
@ T
J
= T
J
max
mA
7
7
5
5
Forward Conduction
Parameter
I
F(AV)
I
F(RMS)
I
FSM
Maximum average forward current
@ Case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
8AF
50
150
79
714
747
600
628
Units Conditions
A
°C
A
A
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
As
2
180° conduction, half sine wave
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
It
2
Maximum I t for fusing
2
2546
2324
1800
1643
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
25455
0.60
0.68
6.66
6.25
1.45
A
2
√s
V
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(π x I
F(AV)
< I < 20 x
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(π x I
F(AV)
< I < 20 x
π
x I
F(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
FM
=
π
x rated I
F(AV)
V
F(TO)1
Low level value of threshold voltage
V
F(TO)2
High level value of threshold voltage
r
f1
r
f2
V
FM
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
mΩ
V
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
wt
Max. junction operating temperature range
Storage temperature range
Max. thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Approximate weight
Case style
8AF
- 65 to 195
- 65 to 195
0.60
0.50
10 (0.36)
B-47
Units Conditions
°C
K/W
DC operation
As per mounting details
g (oz)
See outline table
MOUNTING: A 12.6 ± 0.02mm (0.496 to 0.497 inch) diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038mm (0.015
inch) x 45°. The autodiode should then be press fitted, ensuring that the sides of the autodiode are kept parallel to the sides of the hole.
2
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8AF Series
Bulletin I20262 05/96
∆R
thJC
Conduction
Conduction angle
180°
120°
90°
60°
30°
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
0.042
0.045
0.06
0.10
0.15
0.026
0.043
0.06
0.10
0.15
Units
Conditions
T
J
= T
J
max.
K/W
Ordering Information Table
Device Code
8AF
1
1
2
3
4
-
-
-
-
Essential part number
4
2
N
3
LV
4
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
N = Normal Polarity (cathode to case)
R = Reverse Polarity (anode to case)
PP = Without Lead
LH = Horizontal Lead
LV = Vertical Lead
Outline Table
15.8 (0.62)
12.5 (0.49)
7 (0.28)
0.9 (0.03)
R 0.4 (0.02)
16.5 (0.65)
2.4 (0.09)
5 (0.20)
22.5 (0.89)
0.5 (0.02)
6 (0.24)
DIA. 12.77 / 13.27
(0.50) / (0.52)
All dimensions in millimeters (inches)
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3
8AF Series
Bulletin I20262 05/96
Maximum Allowable Case Temperature (°C)
8AF Series
R
thJC
(DC) = 0.6 K/W
190
180
Conduction Angle
Maximum Allowable Case Temperature (°C)
200
200
190
180
8AF Series
R
thJC
(DC) = 0.6 K/W
Conduction Period
170
160
150
30°
140
0
5 10 15 20 25 30 35 40 45 50 55
Average Forward Current (A)
60°
170
160
150
30°
140
0
10
20
30
40
50
60
70
80
Average Forward Current (A)
90°
120°
180°
90°
60°
120°
180°
DC
Fig. 1 - Current Ratings Characteristics
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
0
25
50
8AF Series
T
J
= 195°C
5K
/W
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W
)
180°
120°
90°
60°
30°
R
A
thS
1.5
2K
/W
K/
W
=
1
K/
W
RMS Limit
3K
/W
-D
el
ta
R
Conduction Angle
10 K/W
15 K/W
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
8AF Series
T = 195°C
J
Conduction Period
10 K/W
15 K/W
Maximum Average Forward Power Loss (W)
DC
180°
120°
90°
60°
30°
R
SA
th
1.5
=
K/
W
1
K/
W
2K
/W
-D
el
ta
R
RMS Limit
3K
/W
5K
/W
Fig. 4 - Forward Power Loss Characteristics
4
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8AF Series
Bulletin I20262 05/96
700
Peak Half Sine W
ave Forward Current (A)
650
600
550
500
450
400
350
300
250
200
150
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
750
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 195°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
700
650
600
550
500
450
400
350
300
250
200
150
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 195 °C
No Voltage Reapplied
Rated V
RRM
Reapplied
8AF Series
8AF Series
0.1
Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
Instantaneous Forward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
Transient Thermal Impedance Z
thJC
(K/W
)
Steady State Value
(DC Operation)
8AF Series
100
0.1
10
T
J
= 25°C
T = 195°C
J
1
0
1
2
3
4
5
6
7
Instantaneous Forward Voltage (V)
8AF Series
0.01
0.001
0.01
0.1
1
10
Square W
ave Pulse Duration (s)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
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5
Embedded System
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