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R1LV1616HSA-4LI

Description
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
Categorystorage    storage   
File Size149KB,21 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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R1LV1616HSA-4LI Overview

Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)

R1LV1616HSA-4LI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeTSOP1
package instructionTSSOP, TSSOP48,.8,20
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time45 ns
Spare memory width8
I/O typeCOMMON
JESD-30 codeR-PDSO-G48
length18.4 mm
memory density16777216 bi
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level2
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.000025 A
Minimum standby current1.5 V
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width12 mm
R1LV1616H-I Series
Wide Temperature Range Version
16 M SRAM (1-Mword
×
16-bit / 2-Mword
×
8-bit)
REJ03C0195-0101
Rev.1.01
Nov.18.2004
Description
The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword
×
16-bit / 2-Mword
×
8-bit.
R1LV1616H-I Series has realized higher density, higher performance and low power consumption by
employing CMOS process technology (6-transistor memory cell). It offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for
high density surface mounting.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 45/55 ns (max)
Power dissipation:
Active: 9 mW/MHz (typ)
Standby: 1.5
µW
(typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range:
−40
to +85°C
Byte function (×8 mode) available by BYTE# & A-1.
Rev.1.01, Nov.18.2004, page 1 of 19

R1LV1616HSA-4LI Related Products

R1LV1616HSA-4LI R1LV1616HSA-4SI R1LV1616H-I R1LV1616HSA-5SI
Description Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
Is it Rohs certified? conform to conform to - conform to
Maker Renesas Electronics Corporation Renesas Electronics Corporation - Renesas Electronics Corporation
Parts packaging code TSOP1 TSOP1 - TSOP1
package instruction TSSOP, TSSOP48,.8,20 TSOP1, TSSOP48,.8,20 - TSOP1, TSSOP48,.8,20
Contacts 48 48 - 48
Reach Compliance Code unknow compli - compli
ECCN code 3A991.B.2.A 3A991.B.2.A - 3A991.B.2.A
Maximum access time 45 ns 45 ns - 55 ns
Spare memory width 8 8 - 8
I/O type COMMON COMMON - COMMON
JESD-30 code R-PDSO-G48 R-PDSO-G48 - R-PDSO-G48
length 18.4 mm 18.4 mm - 18.4 mm
memory density 16777216 bi 16777216 bi - 16777216 bi
Memory IC Type STANDARD SRAM STANDARD SRAM - SRAM STD
memory width 16 16 - 16
Humidity sensitivity level 2 2 - 2
Number of functions 1 1 - 1
Number of terminals 48 48 - 48
word count 1048576 words 1048576 words - 1048576 words
character code 1000000 1000000 - 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C - 85 °C
Minimum operating temperature -40 °C -40 °C - -40 °C
organize 1MX16 1MX16 - 1MX16
Output characteristics 3-STATE 3-STATE - 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code TSSOP TSOP1 - TSOP1
Encapsulate equivalent code TSSOP48,.8,20 TSSOP48,.8,20 - TSSOP48,.8,20
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL - PARALLEL
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED - NOT SPECIFIED
power supply 3/3.3 V 3/3.3 V - 3/3.3 V
Certification status Not Qualified Not Qualified - Not Qualified
Maximum seat height 1.2 mm 1.2 mm - 1.2 mm
Maximum standby current 0.000025 A 0.000008 A - 0.000008 A
Minimum standby current 1.5 V 1.5 V - 1.5 V
Maximum slew rate 0.05 mA 0.05 mA - 0.05 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V - 3.6 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V - 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V - 3 V
surface mount YES YES - YES
technology CMOS CMOS - CMOS
Temperature level INDUSTRIAL INDUSTRIAL - INDUSTRIAL
Terminal form GULL WING GULL WING - GULL WING
Terminal pitch 0.5 mm 0.5 mm - 0.5 mm
Terminal location DUAL DUAL - DUAL
Maximum time at peak reflow temperature 20 NOT SPECIFIED - NOT SPECIFIED
width 12 mm 12 mm - 12 mm
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