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85EPS12JPBF

Description
Rectifier Diode, 1 Phase, 1 Element, 85A, 1200V V(RRM), Silicon, POWIRTAB-1
Categorydiode    Rectifier diode   
File Size120KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

85EPS12JPBF Overview

Rectifier Diode, 1 Phase, 1 Element, 85A, 1200V V(RRM), Silicon, POWIRTAB-1

85EPS12JPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-X1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSFM-X1
Maximum non-repetitive peak forward current1500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current85 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Base Number Matches1
Bulletin I2139 rev. C 10/02
SAFE
IR
Series
85EPS..
INPUT RECTIFIER DIODE
I
F(RMS)
= 160A
V
F
I
FSM
< 1.15V @ 85A
= 1400A
V
RRM
800 and 1200V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sine waveform
@ T
C
= 95° C
I
F(RMS)
V
RRM
range
I
FSM
V
F
T
J
@ 85A, T
J
= 25°C
range
(*)
Description/ Features
Units
A
A
V
A
V
°C
The 85EPS.. rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop, with
moderate leakage.
The glass passivation technology used has reliable
operation up to 150° C junction temperature.
Available in the new
Pow
IR
tab
TM
package, this new
series is suitable for a large range of applications
combining excellent die to footprint ratio and sturdeness
connectivity for use in high current environments.
85EPS..
85
160
800 and 1200
1400
1.15
- 40 to 150
Case Styles
85EPS..
85EPS..J
(*)
for higher voltage up to 1600V contact factory
www.irf.com
1

85EPS12JPBF Related Products

85EPS12JPBF
Description Rectifier Diode, 1 Phase, 1 Element, 85A, 1200V V(RRM), Silicon, POWIRTAB-1
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker International Rectifier ( Infineon )
package instruction R-PSFM-X1
Contacts 1
Reach Compliance Code compliant
ECCN code EAR99
application GENERAL PURPOSE
Shell connection CATHODE
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
JESD-30 code R-PSFM-X1
Maximum non-repetitive peak forward current 1500 A
Number of components 1
Phase 1
Number of terminals 1
Maximum operating temperature 150 °C
Minimum operating temperature -40 °C
Maximum output current 85 A
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260
Certification status Not Qualified
Maximum repetitive peak reverse voltage 1200 V
surface mount NO
Terminal form UNSPECIFIED
Terminal location SINGLE
Maximum time at peak reflow temperature 40
Base Number Matches 1
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