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8PH100

Description
Bridge Rectifier Diode, 1 Phase, 8A, 1000V V(RRM), Silicon
Categorydiode   
File Size85KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric Compare View All

8PH100 Overview

Bridge Rectifier Diode, 1 Phase, 8A, 1000V V(RRM), Silicon

8PH100 Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionR-PSFM-W4
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSFM-W4
Maximum non-repetitive peak forward current300 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Base Number Matches1
8PH
SINGLE-PHASE FULL WAVE BRIDGE
8 AMPERES
FOR P.C. BOARD AND HEAT SINK MOUNTING
omponent
under the c
ion
.
tes recognit
mark indica riters Laboratories, inc
This
erw
Und
program of
PRV/Leg
Type No.
50V
8PH05
100V
8PH10
200V
8PH20
400V
8PH40
600V
8PH60
800V
8PH80
1000V
8PH100
ELECTRICAL CHARACTERISTICS PER LEG
(at T
A
=25 C Unl es s Oth erw ise Spe ci fie d)
Average Output Current. lo @65 C Tc (Fig.1)
Max. Forward Voltage Drop, VF=1.0 V @
I
F
=
Max.DC Reverse Current @ PRV, I
R
Max.DC Reverse Current @ PRV,and 100
O
C,
I
R
Max.Peak Surge Current, I
FSM
Thermal Resistance , R
0
j-c
Ambient Operating Temperature Range,T
A
Storge TemperatureRange,T
STG
(8.3ms) (Fig.2)
O
8
2.5
10
300
300
5.8
-55 to +150
-55 to +150
Amp
Amp
A
A
Amp
o
C/ W
o
C
C
o
Note 1:Derate Io by 20% for capacitive loads
EDI reserves the right to change these specifications at any time without notice

8PH100 Related Products

8PH100 8PH80 8PH60 8PH10
Description Bridge Rectifier Diode, 1 Phase, 8A, 1000V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 8A, 100V V(RRM), Silicon
package instruction R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Reach Compliance Code unknown unknown unknown unknown
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V
JESD-30 code R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 800 V 600 V 100 V
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE
Base Number Matches 1 1 1 1
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