AME8809FEHAZ datasheet, PDF - EEWORLD Datasheet

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AME8809FEHAZ: Description600mA CMOS LDO; CategoryPower/power management The power supply circuit; File Size170KB，18 Pages; ManufacturerAnalogMicroElectronics,Inc.(AME); AMT was founded in Taiwan in November 2000 and merged into AMT Microelectronics, Inc., a US company located in Silicon Valley, California, USA. Its stock was officially listed for public trading in March 2004.

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AME8809FEHAZ Overview

600mA CMOS LDO

AME8809FEHAZ Parametric

Parameter Name	Attribute value
Maker	AnalogMicroElectronics,Inc.(AME)
package instruction	,
Reach Compliance Code	compli

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AME, Inc.

AME8806 / 8809 / 8842

General Description

The AME8806/8809/8842 family of positive, linear regu-

lators feature low quiescent current (30µA typ.) with low

dropout voltage, making them ideal for battery applica-

tions. The space-saving SO-8 package is attractive for

"Pocket" and "Hand Held" applications.

These rugged devices have both Thermal Shutdown,

and Current Fold-back to prevent device failure under the

"Worst" of operating conditions.

In applications requiring a low noise, regulated supply,

place a 1000 pF capacitor between Bypass and ground.

The AME8806/8809/8842 is stable with an output ca-

pacitance of 2.2µF or greater.

600mA CMOS LDO

Functional Block Diagram

OUT

Overcurrent

Shutdown

Thermal

Shutdown

BYP

AMP

Features

Very Low Dropout Voltage

Guaranteed 600mA Output

Accurate to within 1.5%

30µA Quiescent Current

Over-Temperature Shutdown

Current Limiting

Short Circuit Current Fold-back

Noise Reduction Bypass Capacitor

Power-Saving Shutdown Mode

Space-Saving SO-8 Package

Factory Pre-set Output Voltages

Low Temperature Coefficient

All AME's Lead Free Products Meet RoHS

Standards

INPUT

ref

=1.215V

GND

Typical Application

OUT

OUTPUT

AME8806

AME8809

BYP

GND

1µF

1000pF

2.2µF

Applications

Instrumentation

Portable Electronics

Wireless Devices

Cordless Phones

PC Peripherals

Battery Powered Widgets

Electronic Scales

INPUT

OUT

OUTPUT

AME8842

GND

1µF

2.2µF

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