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IRF6607

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size200KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF6607 Overview

Power MOSFET

IRF6607 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionISOMETRIC-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW CONDUCTION LOSS
Avalanche Energy Efficiency Rating (Eas)51 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)27 A
Maximum drain current (ID)27 A
Maximum drain-source on-resistance0.0033 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N3
JESD-609 codee4
Humidity sensitivity level3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)42 W
Maximum pulsed drain current (IDM)220 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceSilver/Nickel (Ag/Ni)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 94574B
HEXFET
®
Power MOSFET
l
IRF6607
Qg(typ.)
50nC
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface
Mount Techniques
V
DSS
30V
R
DS(on)
max
3.3mΩ@V
GS
= 10V
4.4mΩ@V
GS
= 4.5V
MT
MX
MT
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
Description
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The
IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
±12
94
27
22
220
3.6
2.3
42
0.029
-40 to + 150
Units
V
A
g
g
c
W
W/°C
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
fj
gj
hj
ij
Typ.
–––
12.5
20
–––
–––
Max.
35
–––
–––
3.0
1.0
Units
°C/W
Notes

through
ˆ
are on page 11
www.irf.com
1
4/8/04

IRF6607 Related Products

IRF6607 IRF6607TR1
Description Power MOSFET Power MOSFET
Is it Rohs certified? conform to conform to
package instruction ISOMETRIC-3 ISOMETRIC-3
Contacts 3 3
Reach Compliance Code unknow compli
ECCN code EAR99 EAR99
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Avalanche Energy Efficiency Rating (Eas) 51 mJ 51 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 27 A 94 A
Maximum drain current (ID) 27 A 27 A
Maximum drain-source on-resistance 0.0033 Ω 0.0033 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XBCC-N3 R-XBCC-N3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 42 W 42 W
Maximum pulsed drain current (IDM) 220 A 220 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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