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IRF7342

Description
3.4 A, 55 V, 0.105 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
CategoryDiscrete semiconductor    The transistor   
File Size317KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRF7342 Overview

3.4 A, 55 V, 0.105 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA

IRF7342 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)114 mJ
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)3.4 A
Maximum drain current (ID)3.4 A
Maximum drain-source on-resistance0.105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)27 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
 
IRF7342PbF
Generation V Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
HEXFET
®
Power MOSFET
 
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
V
DSS
R
DS(on)
max.
I
D
-55V
0.105
-3.4A
6
5
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized lead frame for
enhanced thermal characteristics and multiple-die capability making it
ideal in a variety of power applications. With these improvements,
multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infra
red, or wave soldering techniques. Power dissipation of greater than
0.8W is possible in a typical PCB mount application.
SO-8
IRF7342PbF
G
Gate
D
Drain
S
Source
Base part number
IRF7342PbF
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7342PbF
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
V
GSM
E
AS
dv/dt
T
J
T
STG
Drain-Source Voltage
Parameter
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
Units
V
A
 
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear De rating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp < 10
µs
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
W
 
mW°/C
V
mJ
V/ns
°C 
Thermal Resistance
 
Symbol
R
JA
Junction-to-Ambient
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
1
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