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IRLBA1304

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size106KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRLBA1304 Overview

Power MOSFET

IRLBA1304 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1160 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)185 A
Maximum drain current (ID)95 A
Maximum drain-source on-resistance0.004 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
Maximum pulsed drain current (IDM)740 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD- 91842A
IRLBA1304
HEXFET
®
Power MOSFET
l
l
l
l
l
q
Logic-Level Gate Drive
Ultra Low On-Resistance
Same outline as TO-220
50% greater current in typ.
application conditions vs. TO-220
Fully Avalanche Rated
Purchase IRLBA1304/P for solder plated option.
D
V
DSS
= 40V
R
DS(on)
= 0.004Ω
G
I
D
= 185A…
S
Description
The HEXFET
®
is the most popular power MOSFET in the world.
This particular HEXFET
®
is in the Super220
TM
and has
the same outline and
pinout as the industry standard TO-220. It has increased current handling
capability over both the TO-220 and the much larger TO-247 package. This
makes it ideal to reduce component count in multiparalled TO-220 applications,
reduce system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline.
This package has also been designed to meet
automotive qualification standard Q101.
Super
-
220
Max.
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
300 (1.6mm from case )
20
N
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.5
–––
Max.
0.5
–––
58
Units
°C/W
* Current capability in normal application, see Fig.9.
www.irf.com
1
9/14/99
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