AWT6131
PCS/CDMA 3.5V/29dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
•
•
•
•
•
•
•
•
InGaP HBT Technology
High Efficiency: 37%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
µA
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package:
1.56mm Max
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
•
•
•
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
Tri Mode CDMA Handsets with GPS
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6131 provides the additional output power
margin RF designers need to overcome additional
post-PA insertion loss in tri-mode handset designs
supporting E911 (GPS enabled). The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4mm x 4mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
Ω
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
11/2002
AWT6131
GND
V
CC
RF
IN
GND
V
MODE
V
REF
1
2
3
4
5
GND
Figure 2: Pinout (X-ray Top View)
10 V
CC
9
8
7
6
GND
RF
OUT
GND
GND
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
NAME
V
CC
RF
IN
GND
V
MODE
V
REF
GND
GND
RF
OUT
GND
V
CC
DESCRIPTION
Supply Voltage
RF Input
Ground
Mode Control Voltage
Reference Voltage
Ground
Ground
RF Output
Ground
Supply Voltage
2
PRELIMINARY DATA SHEET - Rev 1.0
11/2002
AWT6131
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Mode Control Voltage (V
MODE
)
Reference Voltage (V
REF
)
RF Input Power (P
IN
)
Storage Temperature (T
STG
)
MIN
0
0
0
-
-40
MAX
+5
+3.5
+3.5
+10
+150
UNIT
V
V
V
dB m
°C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
Mode Control Voltage (V
MODE
)
RF Output Power (P
OUT
)
Case Temperature (T
C
)
MIN
1850
+3.2
+2.8
0
+2.5
0
+29.0
-30
TYP
-
+3.5
+2.9
-
+2.9
-
-
-
MAX
1910
+4.2
+3.1
+0.5
+3.1
+0.5
-
+85
UNIT
MHz
V
V
V
dB m
o
COMMENTS
PA "on"
PA "shut down"
Low Bias Mode
High Bias Mode
C
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
PRELIMINARY DATA SHEET - Rev 1.0
11/2002
3
AWT6131
Table 4: Electrical Specifications
(T
C
= +25 °C, V
CC
= +3.5 V, V
REF
= +2.9 V, 50
Ω
system)
PARAMETER
Gain
Adjacent Channel Power
at ±1.25 kHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
Adjacent Channel Power
at ±2.25 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
Power-Added Efficiency
Quiescent Current (Icq)
Reference Current
Mode Control Current
Leakage Current
Noise in Receive Band
Harmonics
2fo
3fo, 4fo
Input Impedance
MIN
26
23.5
-
-
TYP
28
25
-48
-50
MAX
30
27.5
-46.5
-46.5
UNIT
dB
COMMENTS
P
OUT
= +29 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.9 V
P
OUT
= +29 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.9 V
dB
-
-
35.5
6.5
-
-
-
-
-
-
-
-
-61
-65
37
7.5
50
6.5
0.3
<1
-135
-40
-55
-
-57
-57
-
-
60
9
0.5
5
-133
-30
-30
2:1
dB
P
OUT
= +29 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.9 V
P
OUT
= +29 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.9 V
V
MODE
= +2.9 V
through V
REF
pin
through V
MODE
pin
V
CC
= +4.2 V, V
REF
= 0 V
V
MODE
= 0 V
%
mA
mA
mA
µA
dBm/Hz 1930 MHz to 1990 MHz
dB c
VSWR
P
OUT
< +29 dBm
In-band load VSWR < 8:1
Out-of-band load VSWR < 8:1
Applies over all voltage and
temperature operating ranges
V
CC
= +5.0 V, P
IN
= +5 dBm
Applies over full operating
temperature range
Spurious Output Level
(all spurious outputs)
-
-
-65
dB c
Load mismatch stress with no
permanent degradation or failure
8:1
-
-
VSWR
4
PRELIMINARY DATA SHEET - Rev 1.0
11/2002
AWT6131
PERFORMANCE DATA
Figure 3: PAE vs. Frequency
P
OUT
= +29 dBm, High Bias Mode
(T
C
= +25 °C, V
CC
= +3.4 V, V
REF
= +2.9 V, V
MODE
= 0 V)
40.0
39.5
-45.00
39.0
ACPR (dB)
Figure 4: ACP1 vs. Frequency
P
OUT
= +29 dBm, High Bias Mode
(T
C
= +25 °C, V
CC
= +3.4 V, V
REF
= +2.9 V, V
MODE
= 0 V)
-44.00
PAE (%)
38.5
38.0
37.5
37.0
36.5
36.0
1850 MHz
1880 MHz
Frequency
-30deg C
25deg C
85deg C
-46.00
-47.00
-48.00
-49.00
-50.00
1910 MHz
1850 MHz
1880 MHz
Frequency
-30deg C
25deg C
85deg C
1910 MHz
Figure 5: ACP2 vs. Frequency
P
OUT
= +29 dBm, High Bias Mode
(T
C
= +25 °C, V
CC
= +3.4 V, V
REF
= +2.9 V, V
MODE
= 0 V)
-52.00
-53.00
-54.00
-55.00
ACPR (dB)
Figure 6: PAE vs. Frequency
P
OUT
= +16 dBm, Low Bias Mode
(T
C
= +25 °C, V
CC
= +3.4 V, V
REF
= +2.9 V, V
MODE
= +2.9 V)
8.4
8.2
8.0
-56.00
-57.00
-58.00
-59.00
PAE (%)
1850 MHz
1880 MHz
Frequency
-30deg C
25deg C
85deg C
7.8
7.6
7.4
-60.00
-61.00
1910 MHz
7.2
7.0
1850 MHz
1880 MHz
Frequency
-30deg C
25deg C
85deg C
1910 MHz
Figure 8: ACP2 vs. Frequency
Figure 7: ACP1 vs. Frequency
P
OUT
= +16 dBm, Low Bias Mode
P
OUT
= +16 dBm, Low Bias Mode
(T
C
= +25 °C, V
CC
= +3.4 V, V
REF
= +2.9 V, V
MODE
= +2.9 V)
(T
C
= +25 °C, V
CC
= +3.4 V, V
REF
= +2.9 V, V
MODE
= +2.9 V)
-44.00
-45.00
-46.00
-47.00
-62.00
ACPR (dB)
-58.00
-60.00
ACPR (dB)
-48.00
-49.00
-50.00
-51.00
-52.00
-53.00
-54.00
1850 MHz
1880 MHz
Frequency
-30deg C
25deg C
85deg C
-64.00
-66.00
-68.00
-70.00
-72.00
1910 MHz
-74.00
1850 MHz
1880 MHz
Frequency
-30deg C
25deg C
85deg C
1910 MHz
PRELIMINARY DATA SHEET - Rev 1.0
11/2002
5
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