PBSS5160K
60 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 30 June 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT346 (SC-59A)
Surface Mounted Device (SMD) plastic package.
NPN complement: PBSS4160K.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s
s
s
s
s
High voltage DC-to-DC conversion
High voltage MOSFET gate driving
High voltage motor control
High voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
t
p
≤
1 ms
I
C
=
−1
A;
I
B
=
−100
mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
255
Max
−60
−1
−2
340
Unit
V
A
A
mΩ
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Philips Semiconductors
PBSS5160K
60 V, 1 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
3
1
2
sym013
Simplified outline
Symbol
3
3. Ordering information
Table 3:
Ordering information
Package
Name
PBSS5160K
SC-59A
Description
plastic surface mounted package; 3 leads
Version
SOT346
Type number
4. Marking
Table 4:
Marking codes
Marking code
XA
Type number
PBSS5160K
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
collector-emitter
voltage
emitter-base voltage
collector current (DC)
Conditions
open base
open collector
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
[1]
[2]
[3]
Max
−80
−60
−5
−0.7
−0.86
−1
−2
−300
−1
250
350
425
Unit
V
V
V
A
A
A
A
mA
A
mW
mW
mW
collector-base voltage open emitter
I
CM
I
B
I
BM
P
tot
peak collector current
base current (DC)
peak base current
single pulse; t
p
≤
1 ms
single pulse; t
p
≤
1 ms
total power dissipation T
amb
≤
25
°C
-
-
-
9397 750 15185
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 30 June 2005
2 of 14
Philips Semiconductors
PBSS5160K
60 V, 1 A PNP low V
CEsat
(BISS) transistor
Table 5:
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
0.5
P
tot
(W)
0.4
(2)
(1)
006aaa497
0.3
(3)
0.2
0.1
0
0
40
80
120
160
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
9397 750 15185
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 30 June 2005
3 of 14
Philips Semiconductors
PBSS5160K
60 V, 1 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
500
357
294
150
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.50
0.20
0.10
0.05
10
0.02
0.01
0
1
0.75
0.33
006aaa498
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 15185
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 30 June 2005
4 of 14
Philips Semiconductors
PBSS5160K
60 V, 1 A PNP low V
CEsat
(BISS) transistor
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.20
0.10
0.05
10
0.02
0.01
0
1
0.33
006aaa499
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.50
0.20
0.05
10
0.02
0.01
0
1
0.75
0.33
0.10
006aaa500
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 15185
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 30 June 2005
5 of 14
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