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BDP952...BDP956
PNP Silicon AF Power Transistors
For AF driver and output stages
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP951...BDP955 (NPN)
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
4
3
2
1
VPS05163
Type
BDP952
BDP954
BDP956
Maximum Ratings
Parameter
Marking
BDP 952
BDP 954
BDP 956
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
Package
SOT223
SOT223
SOT223
Symbol
V
CEO
V
CBO
V
EBO
BDP952
80
100
5
BDP954
100
120
5
BDP956
Unit
120
140
5
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 99 °C
Junction temperature
Storage temperature
Thermal Resistance
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
R
thJS
3
5
200
500
3
150
-65 ... 150
A
mA
W
°C
Junction - soldering point
1)
17
K/W
Jul-06-2001
BDP952...BDP956
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BDP952
BDP954
BDP956
Collector-base breakdown voltage
I
C
= 100 µA,
I
B
= 0
BDP952
BDP954
BDP956
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 100 V,
I
E
= 0
Collector cutoff current
V
CB
= 100 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain 1)
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 2 A,
V
CE
= 2 V
Collector-emitter saturation voltage1)
I
C
= 2 A,
I
B
= 0.2 A
Base-emitter saturation voltage 1)
I
C
= 2 A,
I
B
= 0.2 A
V
BEsat
-
-
1.5
V
CEsat
h
FE
25
40
15
-
-
-
-
-
-
475
-
0.8
I
EBO
-
-
100
I
CBO
-
-
20
I
CBO
-
-
100
V
(BR)EBO
V
(BR)CBO
100
120
140
5
-
-
-
-
-
-
-
-
V
(BR)CEO
80
100
120
-
-
-
-
-
-
typ.
max.
Unit
V
nA
µA
nA
-
V
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1) Pulse test: t
≤=
300
µ
s, D = 2%
f
T
C
cb
-
-
100
40
-
-
MHz
pF
2
Jul-06-2001
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