CAT93C86K-TE13 datasheet, PDF - EEWORLD Datasheet

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CAT93C86K-TE13: Description1KX16 MICROWIRE BUS SERIAL EEPROM, PDSO8, EIAJ, SOIC-8; Categorystorage; File Size149KB，10 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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CAT93C86K-TE13 Overview

1KX16 MICROWIRE BUS SERIAL EEPROM, PDSO8, EIAJ, SOIC-8

CAT93C86K-TE13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	SOIC
package instruction	SOP,
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION
Spare memory width	8
Maximum clock frequency (fCLK)	1 MHz
Data retention time - minimum	100
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
length	5.3 mm
memory density	16384 bit
Memory IC Type	EEPROM
memory width	16
Number of functions	1
Number of terminals	8
word count	1024 words
character code	1000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1KX16
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	240
Certification status	Not Qualified
Maximum seat height	2.03 mm
Serial bus type	MICROWIRE
Maximum supply voltage (Vsup)	6 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	5.25 mm
Base Number Matches	1

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CAT93C86

16 Kb Microwire Serial

EEPROM

Description

The CAT93C86 is a 16 Kb Serial EEPROM memory device which

is configured as either registers of 16 bits (ORG pin at V

) or 8 bits

(ORG pin at GND). Each register can be written (or read) serially by

using the DI (or DO) pin. The CAT93C86 is manufactured using

ON Semiconductor’s advanced CMOS EEPROM floating gate

technology. The device is designed to endure 1,000,000 program/erase

cycles and has a data retention of 100 years. The device is available in

8−pin DIP and 8−pin SOIC packages.

Features

http://onsemi.com

SOIC−8

V, W SUFFIX

CASE 751BD

•

High Speed Operation: 3 MHz / V

= 5 V

Low Power CMOS Technology

1.8 V to 5.5 V Operation

Selectable x8 or x16 Memory Organization

Self−timed Write Cycle with Auto−clear

Hardware and Software Write Protection

Power−up Inadvertent Write Protection

Sequential Read

Program Enable (PE) Pin

1,000,000 Program/Erase Cycles

100 Year Data Retention

Industrial and Extended Temperature Ranges

8−lead PDIP and SOIC Packages

These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS

Compliant

PDIP−8

L SUFFIX

CASE 646AA

SOIC−8

X SUFFIX

CASE 751BE

PIN CONFIGURATION

ORG

GND

ORG

GND

PDIP (L), SOIC (V, X)

SOIC (W)*

PIN FUNCTION

Pin Name

Function

Chip Select

Clock Input

Serial Data Input

Serial Data Output

Power Supply

Ground

Memory Organization

Program Enable

ORG

CAT93C86

GND

ORG

GND

Figure 1. Functional Symbol

Note:

When the ORG pin is connected to V

, the x16 organization

is selected. When it is connected to ground, the x8 pin is selected. If

the ORG pin is left unconnected, then an internal pull−up device will

select the x16 organization.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 10 of this data sheet.

* Not Recommended for New Designs

Semiconductor Components Industries, LLC, 2013

October, 2013

−

Rev. 12

Publication Order Number:

CAT93C86/D

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