Microsemi reserves the right to change, without notice, the specifications and information contained herein.
6.0
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
5.0
4.0
3.0
2.0
1.0
0
10
-5
D = 0.9
0.7
0.5
0.3
SINGLE PULSE
0.1
0.05
10
-4
10
-3
Note:
PDM
t1
t2
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-2
10
-1
1.0
10
100
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T
J
(°C)
T
C
(°C)
1.62
1.49
2.30
5-2006
Dissipated Power
(Watts)
0.0007
0.247
1.76
053-4243 Rev B
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
EXT
TYPICAL PERFORMANCE CURVES
30
25
t
rr
, REVERSE RECOVERY TIME
(ns)
120
100
80
60
40
20
0
APT8DQ60K3CT(G)
T = 125°C
J
V = 400V
R
16A
I
F
, FORWARD CURRENT
(A)
T
J
= 175°C
20
15
8A
4A
T
J
= 125°C
10
5
0
T
J
= 25°C
T
J
= -55°C
0
0.5 1.0
1.5 2.0
2.5 3.0 3.5
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
400
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
350
300
250
200
150
100
50
0
T = 125°C
J
V = 400V
R
0
200
400
600
800 1000 1200
-di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
I
RRM
, REVERSE RECOVERY CURRENT
(A)
14
12
10
8
6
4
T = 125°C
J
V = 400V
R
16A
16A
8A
4A
8A
4A
2
0
0
200
400
600
800 1000 1200
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
K
f
, DYNAMIC PARAMETERS
(Normalized to X000A/µs)
1.0
0.8
0.6
0.4
Q
rr
0.2
0.0
I
RRM
Q
rr
0
200
400
600
800 1000 1200
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
12
10
8
I
F(AV)
(A)
6
4
2
0
Duty cycle = 0.5
T = 175°C
J
t
rr
t
rr
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
60
C
J
, JUNCTION CAPACITANCE
(pF)
50
40
30
20
10
0
0
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
10
100 200
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
1
053-4243 Rev B
5-2006
APT8DQ60K3CT(G)
Vr
+18V
0V
D.U.T.
30µH
trr/Qrr
Waveform
di
F
/dt Adjust
APT6038BLL
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
3
4
I
F
- Forward Conduction Current
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
RRM
- Maximum Reverse Recovery Current.
Zero
1
4
5
3
2
trr - Reverse
Recovery
Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 (K3CT) Package Outline
e3 100% Sn
2.80 (.110)
2.60 (.102)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
7.10 (.280)
6.70 (.263)
16.00 (.630)
15.80 (.622)
3.70 (.145)
2.20 (.126)
3.40 (.133) Dia.
3.10 (.123)
6.35 (.250)
MAX.
14.73 (.580)
12.70 (.500)
0.48 (.019)
0.44 (.017)
2.85 (.112)
2.65 (.104)
4.80 (.189)
4.60 (.181)
5-2006
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Anode
Cathode
Anode
1.77 (.070) 3-Plcs.
1.15 (.045)
053-4243 Rev B
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
京公网安备 11010802033920号
EEWORLD
