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IRKT105/10AS90PBF

Description
Silicon Controlled Rectifier, 164.85A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element, TO-240AA, ADD-A-PAK-7
CategoryTrigger device   
File Size226KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRKT105/10AS90PBF Overview

Silicon Controlled Rectifier, 164.85A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element, TO-240AA, ADD-A-PAK-7

IRKT105/10AS90PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-240AA
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Manufacturer packaging codeADD-A-PAK
Reach Compliance Codecompliant
Is SamacsysN
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum DC gate trigger current150 mA
JEDEC-95 codeTO-240AA
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature130 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current164.85 A
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperature40
Trigger device typeSCR
Base Number Matches1
Bulletin I27133 rev. I 09/04
IRK.105 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
ADD-A-pak
TM
GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
105 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
I
T(AV)
or I
F(AV)
@ 85°C
I
O(RMS)
(*)
I
TSM
@ 50Hz
I
FSM
@ 60Hz
I t
I
2
√t
V
RRM
range
T
STG
T
J
(*) As AC switch.
2
IRK.105
105
235
1785
1870
15.91
14.52
159.1
400 to 1600
- 40 to 150
- 40 to130
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
o
@ 50Hz
@ 60Hz
C
C
www.irf.com
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