APTGT50X120RTP3: Without Brake (Pin 7 & 14 not connected)
21
20 19
18 17
16 15
14 13 12 11 10
•
•
•
•
Benefits
22
9
8
23
7
24
1
2
3
4
5
6
•
•
•
•
•
•
•
•
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
All ratings @ T
j
= 25°C unless otherwise specified
Symbol
V
RRM
I
D
I
FSM
Parameter
Repetitive Peak Reverse Voltage
DC Forward Current
Surge Forward Current
t
p
= 10ms
T
C
= 80°C
T
j
= 25°C
T
j
= 150°C
Max ratings
1600
80
500
400
Unit
V
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-4
APTGT50X120BTP3 – Rev 0,
September 2003
1. Absolute maximum ratings
Diode rectifier
Absolute maximum ratings
APTGT50X120RTP3
APTGT50X120BTP3
IGBT & Diode Brake
(only for APTGT50X120BTP3)
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
I
F
Parameter
Collector - Emitter Breakdown Voltage
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
Max ratings
1200
55
35
80
±20
200
15
Unit
V
A
V
W
A
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
Absolute maximum ratings
IGBT & Diode Inverter
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
I
F
I
FRM
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Save Operating Area
DC Forward Current
Repetitive Peak Forward Current
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
T
C
= 80°C
t
p
= 1ms
Max ratings
1200
75
50
100
±20
270
100A @ 1100V
50
100
Unit
V
A
V
W
A
2. Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol
I
R
V
F
R
thJC
Characteristic
Reverse Current
Forward Voltage
Junction to Case
Test Conditions
V
R
= 1600V
T
j
= 150°C
T
j
= 150°C
I
F
= 50A
Min
Typ
3
1.0
Max
Unit
mA
V
°C/W
0.65
IGBT Brake & Diode
(only for APTGT50X120BTP3)
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
V
GE(th)
I
GES
C
ies
C
oes
C
res
V
F
R
thJC
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Voltage
Junction to Case
Test Conditions
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
= 15V
I
C
= 35A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 1.5mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V,
V
CE
= 25V
f = 1MHz
T
j
= 25°C
V
GE
= 0V
I
F
= 35A
T
j
= 125°C
IGBT
Diode
Min
5.0
Typ
4
1.8
2.2
5.8
2530
132
115
2.3
2.5
Max
2.2
6.5
500
Unit
mA
V
V
nA
September 2003
2-4
APTGT50X120BTP3 – Rev 0,
pF
2.7
0.6
1.5
V
°C/W
APT website – http://www.advancedpower.com
APTGT50X120RTP3
APTGT50X120BTP3
IGBT & Diode Inverter
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
V
GE(th)
I
GES
C
ies
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
V
F
Q
rr
R
thJC
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
Forward Voltage
Reverse Recovery Charge
Junction to Case
Test Conditions
V
GE
= 0V, I
C
= 3mA
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
=15V
I
C
= 50A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 2 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18Ω
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18Ω
V
GE
= 0V
I
F
= 50A
I
F
= 50A
V
R
= 600V
di/dt=990A/µs
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
IGBT
Diode
Min
1200
1.4
5.0
Typ
Max
5
2.1
6.5
500
Unit
V
mA
V
V
nA
pF
1.7
2.0
5.8
3600
188
163
85
30
420
65
90
45
520
90
5.8
1.6
1.6
5.2
9.4
ns
ns
mJ
2.2
V
µC
0.45
0.75
°C/W
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
kΩ
K
R
T
=
R
25
exp
B
25 / 50
1 1
−
T
25
T
T: Thermistor temperature
R
T
: Thermistor value at T
M5
N.m
g
APT website – http://www.advancedpower.com
3-4
APTGT50X120BTP3 – Rev 0,
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
V
ISOL
I isol<1mA, 50/60Hz
T
J
Operating junction temperature range
T
STG
Storage Temperature Range
T
C
Operating Case Temperature
To Heatsink
Torque Mounting torque
Wt
Package Weight
3. Thermal and package characteristics
2500
-40
-40
-40
150
125
125
3.3
300
V
°C
September 2003
Min
Typ
Max
Unit
APTGT50X120RTP3
APTGT50X120BTP3
4. Package outline
PIN 1
PIN 24
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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