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BC859TR13

Description
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon,
CategoryThe transistor   
File Size94KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

BC859TR13 Overview

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon,

BC859TR13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codenot_compliant
Is SamacsysN
Other featuresLOW NOISE
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)125
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.65 V
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