TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 30 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 125 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| VCEsat-Max | 0.65 V |
| Base Number Matches | 1 |
| BC859T/R | BC860AT/R | BC860T/R | BC859AT/R | |
|---|---|---|---|---|
| Description | TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
| Reach Compliance Code | unknown | compli | unknown | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 30 V | 45 V | 45 V | 30 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 125 | 125 | 125 | 125 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| VCEsat-Max | 0.65 V | 0.65 V | 0.65 V | 0.65 V |
| Maker | NXP | - | NXP | NXP |
京公网安备 11010802033920号
EEWORLD
