BCW65CR datasheet, PDF - EEWORLD Datasheet

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BCW65CR: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryThe transistor; File Size305KB，2 Pages; ManufacturerDiodes Incorporated

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BCW65CR Overview

Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCW65CR Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	180
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	400 ns
Maximum opening time (tons)	100 ns
Base Number Matches	1

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PART OBSOLETE - USE BCW66H

SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 - AUGUST 1995

PARTMARKING DETAILS

BCW65A EA

BCW65B EB

BCW65C EC

BCW66F EF

BCW66G EG

BCW66H EH

COMPLEMENTARY TYPES

BCW65 BCW67

BCW66 BCW68

BCW65AR

BCW65BR

BCW65CR

BCW66FR

BCW66GR

BCW66HR

BCW65

BCW66

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current(10ms)

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

tot

stg

BCW65

800

1000

100

330

-55 to +150

BCW66

UNIT

°C

3 - 27

BCW65CR Related Products

	BCW65CR	BCW66HR	BCW66GR
Description	Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Parts packaging code	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	unknown	compliant	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	32 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	180	180	110
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
Maximum off time (toff)	400 ns	400 ns	400 ns
Maximum opening time (tons)	100 ns	100 ns	100 ns
Is Samacsys	N	N	-
Maximum operating temperature	150 °C	150 °C	-
Base Number Matches	1	1	-

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