These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT150A60T – Rev 0 May, 2005
Max ratings
600
225
150
350
±20
480
Unit
V
A
V
W
APTGT150A60T
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 600V
T
j
= 25°C
V
GE
=15V
I
C
= 150A
T
j
= 150°C
V
GE
= V
CE
, I
C
= 1.5 mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.5
1.7
5.8
Max
250
1.9
6.5
400
Unit
µA
V
V
nA
5.0
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 150A
R
G
= 6.8Ω
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 150A
R
G
= 6.8Ω
Min
Typ
9200
580
270
115
45
225
55
130
50
300
70
2.6
5.3
Max
Unit
pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RM
I
F(A V)
V
F
t
rr
Q
rr
Maximum Reverse Leakage Current
Maximum Average Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
V
R
=600V
50% duty cycle
Min
600
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
Typ
Max
250
500
Unit
V
µA
A
I
F
= 150A
V
GE
= 0V
I
F
= 150A
V
R
= 300V
di/dt =2100A/µs
150
1.6
1.5
130
225
6.9
14.5
2
V
ns
µC
APT website – http://www.advancedpower.com
2-5
APTGT150A60T – Rev 0 May, 2005
APTGT150A60T
Temperature sensor NTC
(see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.15 K
Min
Typ
50
3952
Max
Unit
kΩ
K
R
T
=
R
25
1 1
R
T
: Thermistor value at T
exp
B
25 / 85
T
−
T
25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
IGBT
Diode
Min
Typ
Max
0.31
0.52
175
125
100
4.7
160
Unit
°C/W
V
°C
N.m
g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
2500
-40
-40
-40
1.5
Package outline
(dimensions in mm)
APT website – http://www.advancedpower.com
3-5
APTGT150A60T – Rev 0 May, 2005
APTGT150A60T
Typical Performance Curve
300
250
T
J
=125°C
Output Characteristics (V
GE
=15V)
T
J
=25°C
Output Characteristics
300
T
J
= 150°C
V
GE
=19V
250
T
J
=150°C
I
C
(A)
200
150
100
50
0
0
0.5
1
T
J
=25°C
200
I
C
(A)
150
100
V
GE
=13V
V
GE
=15V
V
GE
=9V
50
0
1.5
V
CE
(V)
2
2.5
3
0
0.5
1
1.5
2
V
CE
(V)
2.5
3
3.5
300
250
200
150
100
50
0
5
Transfert Characteristics
10
T
J
=25°C
Energy losses vs Collector Current
V
CE
= 300V
V
GE
= 15V
R
G
= 6.8Ω
T
J
= 150°C
Eoff
Eon
8
E (mJ)
6
4
I
C
(A)
T
J
=125°C
T
J
=150°C
T
J
=25°C
Er
2
Eon
0
11
12
0
50
100
150
I
C
(A)
Reverse Bias Safe Operating Area
350
Eon
6
7
8
9
10
200
250
300
V
GE
(V)
Switching Energy Losses vs Gate Resistance
20
16
E (mJ)
12
8
4
0
5
10
15
20
25
30
35
Gate Resistance (ohms)
40
Eoff
Eon
Er
Eoff
V
CE
= 300V
V
GE
=15V
I
C
= 150A
T
J
= 150°C
300
250
I
C
(A)
200
150
100
50
0
0
100
200
300 400
V
CE
(V)
500
600
700
V
GE
=15V
T
J
=150°C
R
G
=6.8Ω
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.35
Thermal Impedance (°C/W)
0.3
0.25
0.2
0.15
0.1
0.05
0.9
0.7
IGBT
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
0
0.00001
Rectangular Pulse Duration in Seconds
APT website – http://www.advancedpower.com
4-5
APTGT150A60T – Rev 0 May, 2005
0.5
APTGT150A60T
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
120
100
80
ZVS
ZCS
V
CE
=300V
D=50%
R
G
=6.8Ω
T
J
=150°C
Forward Characteristic of diode
300
250
200
I
C
(A)
150
100
50
T
J
=25°C
T
J
=125°C
T
J
=150°C
T
c
=85°C
60
40
20
0
0
50
100
I
C
(A)
150
200
Hard
switching
0
0
0.4
0.8
1.2
1.6
V
F
(V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.6
Thermal Impedance (°C/W)
0.5
0.4
0.3
0.2
0.1
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Diode
0.05
0
0.00001
Rectangular Pulse Duration in Seconds
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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