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BC848C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryThe transistor   
File Size123KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
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BC848C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

BC848C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.31 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
MCC
Features
l
l
l
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC846A
THRU
BC848C
NPN Small
Signal Transistor
310mW
SOT-23
A
D
Ideally Suited for Automatic Insertion
150 C Junction Temperature
For Switching and AF Amplifier Applications
o
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Polarity: See Diagram
l
Weight: 0.008 grams ( approx.)
Type
BC846A
BC846B
BC847A
BC847B
Marking Code (Note 2)
Marking
Type
1A
BC847C
1B
BC848A
1E
BC848B
1F
BC848C
Marking
1G
1J
1K
1L
C
B
F
E
G
H
J
Maximum Ratings @ 25
o
C Unless Otherwise Specified
DIMENSIONS
BC846
BC847
BC848
Collector-Emitter Voltage
BC846
BC847
BC848
Emitter-Base Voltage BC846,BC847
BC848
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation@T
s
=50 C(Note1)
Operating & Storage Temperature
o
Charateristic
Collector-Base Voltage
Symbol
V
C B O
V
C E O
V
EBO
I
C
I
C M
I
EM
P
d
Value
80
50
30
65
45
30
6.0
5.0
100
200
200
310
Unit
V
DIM
A
B
C
D
E
F
G
H
J
K
V
V
mA
mA
mA
mW
o
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
T
j
, T
S T G
-55~150
C
Note:
1.
Package mounted on ceramic substrate
0.7mm X 2.5cm
2
area.
2.
Current gain subgroup “C” is not available
for BC846.
.037
.950
.037
.950
www.mccsemi.com
Revision: 2
2003/04/30

BC848C Related Products

BC848C BC847C
Description Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified? incompatible incompatible
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC)
package instruction SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3
Contacts 3 3
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 420 420
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.31 W 0.31 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
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