MCC
Features
l
l
l
omponents
20736 Marilla
Street Chatsworth
!"#
$
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BC846A
THRU
BC848C
NPN Small
Signal Transistor
310mW
SOT-23
A
D
Ideally Suited for Automatic Insertion
150 C Junction Temperature
For Switching and AF Amplifier Applications
o
Mechanical Data
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Case: SOT-23, Molded Plastic
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Terminals: Solderable per MIL-STD-202, Method 208
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Polarity: See Diagram
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Weight: 0.008 grams ( approx.)
Type
BC846A
BC846B
BC847A
BC847B
Marking Code (Note 2)
Marking
Type
1A
BC847C
1B
BC848A
1E
BC848B
1F
BC848C
Marking
1G
1J
1K
1L
C
B
F
E
G
H
J
Maximum Ratings @ 25
o
C Unless Otherwise Specified
DIMENSIONS
BC846
BC847
BC848
Collector-Emitter Voltage
BC846
BC847
BC848
Emitter-Base Voltage BC846,BC847
BC848
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation@T
s
=50 C(Note1)
Operating & Storage Temperature
o
Charateristic
Collector-Base Voltage
Symbol
V
C B O
V
C E O
V
EBO
I
C
I
C M
I
EM
P
d
Value
80
50
30
65
45
30
6.0
5.0
100
200
200
310
Unit
V
DIM
A
B
C
D
E
F
G
H
J
K
V
V
mA
mA
mA
mW
o
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
T
j
, T
S T G
-55~150
C
Note:
1.
Package mounted on ceramic substrate
0.7mm X 2.5cm
2
area.
2.
Current gain subgroup “C” is not available
for BC846.
.037
.950
.037
.950
www.mccsemi.com
Revision: 2
2003/04/30
BC846A thru BC848C
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage (Note 3)
@ T
A
= 25°C unless otherwise specified
Symbol
BC846
BC847 V
(BR)CBO
BC848
Min
80
50
30
65
45
30
6
5
—
—
—
—
—
—
—
—
—
—
—
—
110
200
420
—
—
—
—
580
—
—
—
—
—
—
100
—
—
Typ
—
—
—
—
—
—
—
220
330
600
2.7
4.5
8.7
18
30
60
1.5x10
-4
2x10
-4
3x10
-4
180
290
520
—
—
90
200
700
900
660
—
—
—
—
—
—
300
3.0
2
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
220
450
800
320
400
250
600
—
700
770
15
15
15
15
5.0
—
—
10
Unit
V
V
V
—
—
—
kW
kW
kW
µS
µS
µS
—
—
—
—
°C/W
°C/W
mV
mV
mV
nA
nA
nA
nA
µA
MHz
pF
dB
MCC
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1mA, I
C
= 0
Collector-Emitter Breakdown Voltage (Note 3) BC846
BC847 V
(BR)CEO
BC848
Emitter-Base Breakdown Voltage (Note 3)
H-Parameters
Small Signal Current Gain
BC846
BC847 V
(BR)EBO
BC848
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
—
R
qS
R
qJA
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
BC846
BC847
BC848
I
CES
I
CES
I
CES
I
CBO
I
CBO
f
T
C
CBO
NF
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
A
Current Gain Group
B
C
DC Current Gain
Current Gain Group A
B
(Note 3) C
V
CE
= 5.0V, I
C
= 2.0mA,
f = 1.0kHz
V
CE
= 5.0V, I
C
= 2.0mA
Note 1
Note 1
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 80V
V
CE
= 50V
V
CE
= 30V
V
CB
= 40V
V
CB
= 30V, T
A
= 150°C
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 200µA,
R
S
= 2.0kW,
f = 1.0kHz,
Df
= 200Hz
Thermal Resistance, Junction to Substrate Backside
Thermal Resistance, Junction to Ambient Air
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
Collector-Cutoff Current (Note 3)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
1. Package mounted on ceramic substrate 0.7mm x 2.5cm
2
area.
2. Current gain subgroup “C” is not available for BC846.
3. Short duration pulse test to minimize self-heating effect.
www.mccsemi.com
Revision: 2
2003/04/30