MCC
Features
l
l
l
omponents
20736 Marilla
Street Chatsworth
!"#
$
% !"#
BC856A
THRU
BC858C
PNP Small
Signal Transistor
310mW
SOT-23
A
D
Ideally Suited for Automatic Insertion
150 C Junction Temperature
For Switching and AF Amplifier Applications
o
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Polarity: See Diagram
l
Weight: 0.008 grams ( approx.)
Type
BC856A
BC856B
BC857A
BC857B
Marking Code (Note 2)
Marking
Type
3A
BC857C
3B
BC858A
3E
BC858B
3F
BC858C
C
B
Marking
3G
3J
3K
3L
F
E
G
H
J
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Collector-Base Voltage
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
C B O
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
310
Unit
V
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
DIMENSIONS
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
Collector-Emitter Voltage
V
C E O
V
EBO
I
C
I
C M
I
EM
V
V
mA
mA
mA
mW
o
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation@T
s
=50 C(Note1)
Operating & Storage Temperature
o
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
P
d
T
j
, T
S T G
-55~150
C
Note:
1.
Package mounted on ceramic substrate 0.7mm X 2.5cm
2
area.
2.
Current gain subgroup “C” is not available for BC856
.037
.950
.037
.950
www.mccsemi.com
Revision: 2
2003/04/30
BC856A thru BC858C
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage (Note 3)
H-Parameters
Small Signal Current Gain
Input Impedance
Output Admittance
Reverse Voltage Transfer Ratio
DC Current Gain (Note 3)
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
BC856
BC857
BC858
BC856
BC857
BC858
@ T
A
=25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
R
qJSB
R
qJA
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
BC856
BC857
BC858
I
CES
I
CES
I
CES
I
CBO
I
CBO
f
T
C
CBO
NF
Min
-80
-50
-30
-65
-45
-30
-5
—
—
—
—
—
—
—
—
—
—
—
—
125
220
420
—
—
—
—
—
-600
—
—
—
—
—
—
100
—
—
Typ
—
—
—
—
—
—
—
200
330
600
2.7
4.5
8.7
18
30
60
1.5x10
-4
2x10
-4
3x10
-4
180
290
520
—
—
-75
-250
-700
-850
-650
—
—
—
—
—
—
200
3
2
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
250
475
800
320
400
-300
-650
—
-750
-820
-15
-15
-15
-15
-4.0
—
—
10
Unit
V
V
V
—
—
—
kW
kW
kW
µS
µS
µS
—
—
—
—
°C/W
°C/W
mV
mV
mV
nA
nA
nA
nA
µA
MHz
pF
dB
MCC
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CE
= -5.0V, I
C
= -2.0mA,
f = 1.0kHz
V
CE
= -5.0V, I
C
= -2.0mA
Note 1
Note 1
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CE
= -80V
V
CE
= -50V
V
CE
= -30V
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
V
CE
= -5.0V, I
C
= 200µA,
R
S
= 2kW, f = 1kHz,
Df
= 200Hz
Thermal Resistance, Junction to Substrate Backside
Thermal Resistance, Junction to Ambient
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
Collector-Cutoff Current (Note 3)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
1. Package mounted on ceramic substrate 0.7mm x 2.5cm
2
area.
2. Current gain subgroup “C” is not available for BC856.
3. Short duration pulse test to minimize self-heating effect.
www.mccsemi.com
Revision: 2
2003/04/30
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
