BDS61B datasheet, PDF - EEWORLD Datasheet

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BDS61B: DescriptionTRANSISTOR 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryThe transistor; File Size135KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BDS61B Overview

TRANSISTOR 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BDS61B Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	100 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	8000 ns
Maximum opening time (tons)	2000 ns
Base Number Matches	1

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BDS61B Related Products

	BDS61B	HCHP1206L2R20GF151	BDS61	BDS61C	BDS61C-T	BDS61A-T	BDS61-T	BDS61A
Description	TRANSISTOR 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 2.2ohm, 200V, 2% +/-Tol, -200,200ppm/Cel, 1207,	TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code	unknown	compliant	unknown	unknown	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	4	2	4	4	4	4	4	4
Package form	SMALL OUTLINE	SMT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maker	NXP	-	NXP	-	-	NXP	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Other features	BUILT-IN BIAS RESISTOR	-	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Shell connection	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	3 A	-	3 A	3 A	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	100 V	-	60 V	120 V	120 V	80 V	60 V	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	-	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000	-	1000	1000	1000	1000	1000	1000
JESD-30 code	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	-	1	1	1	1	1	1
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Polarity/channel type	NPN	-	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	8000 ns	-	8000 ns	8000 ns	8000 ns	8000 ns	8000 ns	8000 ns
Maximum opening time (tons)	2000 ns	-	2000 ns	2000 ns	2000 ns	2000 ns	2000 ns	2000 ns

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