BCX69 datasheet, PDF - EEWORLD Datasheet

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BCX69: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN; CategoryThe transistor; File Size21KB，1 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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BCX69 Overview

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN

BCX69 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	85
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BCX69-16 Not Recommended for New

Design, Please Use BCX69-25

SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 2 – FEBRUARY 1995

7

FEATURES

* High gain and low saturation voltages

COMPLEMENTARY TYPE –

PARTMARKING DETAIL –

BCX68

BCX69

– CJ

BCX69-16 – CG

BCX69-25 – CH

BCX69

C

E

C

B

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

-25

-20

-5

-2

-1

1

-65 to +150

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(on)

50

85

60

BCX69-16 100

BCX69-25 160

f

T

C

obo

100

25

h

FE

MIN.

-25

-20

-5

-0.1

-10

-0.5

-1.0

TYP.

MAX. UNIT

V

µA

V

CONDITIONS.

IC =-100µA

IC =-10mA

I

E

=-100µA

V

CB

=-25V

V

CB

=-25V, T

amb

=150°C

V

EB

=-5V

I

C

=-1A, I

B

=-100mA

I

C

=-1A, V

CE

=-1V

I

C

I

C

I

C

I

C

I

C

MHz

pF

=-5mA, V

CE

=-1V

=-500mA, V

CE

=-1V

=-1A, V

CE

=-1V*

=-500mA, V

CE

=-1V*

=-500mA, V

CE

=-1V

375

250

400

Transition Frequency

Output Capacitance

I

C

=-100mA, V

CE

=-5V,

f=100MHz

V

CB

=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤2%

For typical characteristics graphs see FMMT549 datasheet.

3 - 37

BCX69 Related Products

	BCX69
Description	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	85
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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