INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
12A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= -2.0V(Max.)@ I
C
= -5A
·Complement
to Type BDV65/A/B/C
APPLICATIONS
·Designed
for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDV64
Collector-Base
Voltage
BDV64A
BDV64B
VALUE
-60
-80
UNIT
BDV64/A/B/C
V
CBO
V
CEO
Collector-Emitter
Voltage
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
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V
-100
BDV64C
BDV64
-120
-60
BDV64A
BDV64B
-80
V
-100
BDV64C
-120
-5
V
-12
-15
-0.5
125
W
3.5
150
-65~150
℃
℃
A
A
A
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Collector Power Dissipation
@ T
a
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.0
35.7
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDV64
BDV64A
I
C
= -30mA; I
B
= 0
BDV64B
BDV64C
V
CE(
sat
)
V
BE(
on
)
I
CEO
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
I
C
= -5A; I
B
= -20mA
B
BDV64/A/B/C
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
V
-100
-120
-2.0
-2.5
-2.0
V
V
mA
I
C
= -5A; V
CE
= -4V
V
CE
=
1
/
2
V
CEOmax
; I
B
= 0
I
CBO
Collector Cutoff Current
I
CBO
I
EBO
h
FE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
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BDV64
V
CB
= -40V; I
E
= 0;T
J
= 150℃
V
CB
= -50V; I
E
= 0;T
J
= 150℃
V
CB
= -60V; I
E
= 0;T
J
= 150℃
V
CB
= -70V; I
E
= 0;T
J
= 150℃
V
CB
= V
CBOmax
; I
E
= 0
V
EB
= -5V; I
C
= 0
I
C
= -5A; V
CE
= -4V
1000
BDV64A
BDV64B
BDV64C
-2.0
mA
-0.4
-5
mA
mA
isc Website：www.iscsemi.cn
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