Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | CDIL[Continental Device India Pvt. Ltd.] |
| Parts packaging code | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| Is Samacsys | N |
| Maximum collector current (IC) | 8 A |
| Collector-emitter maximum voltage | 700 V |
| Configuration | SINGLE |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 56 W |
| Maximum power dissipation(Abs) | 56 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 7 MHz |
| VCEsat-Max | 1 V |
| Base Number Matches | 1 |
| BU508AT | BD243B | CD3968 | BU505 | BUT11 | BUL45 | BD949 | BUV46 | |
|---|---|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
| Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | incompatible | conform to | incompatible |
| Parts packaging code | SFM | SFM | SFM | SFM | SFM | SFM | SFM | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| Maker | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | - | - | - | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] |
| Maximum collector current (IC) | 8 A | 6 A | 1 A | 2.5 A | - | 5 A | 5 A | 5 A |
| Collector-emitter maximum voltage | 700 V | 80 V | 400 V | 700 V | - | 400 V | 60 V | 400 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB | - | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 | - | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | - | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN | NPN | - | NPN | NPN | NPN |
| Maximum power consumption environment | 56 W | 65 W | 40 W | 10 W | - | 100 W | 40 W | 70 W |
| Maximum power dissipation(Abs) | 56 W | 65 W | 40 W | 75 W | - | 75 W | 40 W | 85 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | - | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | - | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 7 MHz | 3 MHz | 10 MHz | 7.5 MHz | - | 12 MHz | 3 MHz | 12 MHz |
| VCEsat-Max | 1 V | 1.5 V | 1 V | 5 V | - | 0.4 V | 1 V | 5 V |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - | - |
| Minimum DC current gain (hFE) | - | 15 | 10 | 2 | - | 7 | 20 | 5 |
| Maximum operating temperature | - | 150 °C | - | 150 °C | - | 150 °C | 150 °C | 150 °C |
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