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BU508AF

Description
Power Bipolar Transistor, 8A I(C), 1500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3FA, 3 PIN
CategoryThe transistor   
File Size89KB,1 Pages
ManufacturerMicro Commercial Components (MCC)
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BU508AF Overview

Power Bipolar Transistor, 8A I(C), 1500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3FA, 3 PIN

BU508AF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-3FA
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)8 A
Collector-emitter maximum voltage1500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)6
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MCC
Features
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BU508AF
High-voltage, high-speed switching NPN transistor
With TOP-3Fa package
Primarily for use in horizontal deflection circuits of color television
receivers
NPN Silicon
Power Transistors
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
CP
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
1500
700
6.0
15
8.0
34
-55 to +150
-55 to +150
Unit
V
V
V
A
A
W
O
C
O
C
TOP-3Fa
1
2
3
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=100mAdc, I
B
=0)
Collector-Base Cutoff Current
(V
CB
=1500Vdc,I
B
=0)
Emitter-Base Cutoff Current
(V
EB
=6.0Vdc, I
C
=0)
Forward Current Transfer ratio
(I
C
=100mAdc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=4.5Adc, I
B
=1.6Adc)
Base-Emitter Saturation Voltage
(I
C
=4.5Adc,I
B
=2.0Adc)
Min
700
---
---
Max
---
1.0
10
Units
Vdc
mAdc
mAdc
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
Q
R
INCHES
MIN
.028
---
---
---
.433
.122
.215
.039
.429
.228
.130
.618
---
.126
---
.028
.079
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
OFF CHARACTERISTICS
V
(BR)CEO
I
CBO
I
EBO
DIMENSIONS
MM
MIN
.70
.098
.083
.602
.130
.047
.244
.146
---
.205
.846
---
---
---
11.00
3.10
5.45
1.00
10.90
5.80
3.30
15.70
---
3.20
---
.70
2.00
21.50
6.20
3.70
---
5.20
1.20
3.30
2.50
2.10
15.30
MAX
MAX
NOTE
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
6.0
---
---
30
1.0
1.1
---
Vdc
Vdc
www.mccsemi.com
Revision: 1
2003/04/21

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