15S_05XB15A308 02.9.12 4:42 PM ページ 1057
PIN DIODE
NHigh
Power Handling
NSmall
Capacitance at Zero Bias, Extremely
Small Reverse Bias
NSmall
Series Order Resistance
NSmall
Insertion Loss, High Isolation
NExtremely
Small Wave Distortion
(TX sprious <-80dBc, RX intermodulation =
-73dBc @ 90dB
µ)
■Applications
GHigh
Power Antenna Switch
(10W output two-way radio)
■General Description
The XB15A308 PIN diode employs a high reliability glass package that is
designed for solid state antenna switches used in commercial two-way
radios.
■Dimensions
MAX 4.4
MAX 4.2
Unit: mm
MAX 2.1
MIN 26
MIN 26
JEDEC DO-35
■Absolute Maximum Ratings
SYMBOL
V
RM
V
R
I
FSM
*
P
Tj
Tstg
* t = 5sec
TYP 0.6
Ta=25
O
C
RATINGS
50
50
2
500
175
-55 ~ 175
UNITS
V
V
A
mW
O
O
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature
C
C
■Electrical Characteristics
SYMBOL
I
R1
I
R2
I
F
Ct
r
fs
R
P
PARAMETER
Reverse Current
Forward Current
Diode Capacitance
Forward Series Resistance
Parallel Resistance
TEST CONDITIONS
MIN
V
R
= 50V
V
R
= 45V
V
F
= 1.0V
V
R
= 0V, f = 100MHz
I
F
= 50mA, f = 470MHz
V
R
= 0V, f = 100MHz
1.0
100
1.3
0.65
6.0
1.8
0.8
LIMITS
TYP
MAX
10
0.5
Ta=25
O
C
UNITS
µA
µA
mA
pF
Ω
kΩ
15
1057
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