Composite Transistors
XN01558
Silicon NPN epitaxial planar type
For low-frequency amplification
3
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
4
5
1.50
+0.25
–0.05
2.8
+0.2
–0.3
Unit: mm
0.16
+0.10
–0.06
■
Features
•
Two elements incorporated into one package
(Emitter-coupled transistors)
•
Reduction of the mounting area and assembly cost by one half
2
0.30
+0.10
–0.05
10˚
1
■
Basic Part Number
•
2SD2623
×
2
1.1
+0.2
–0.1
(0.65)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
25
20
12
0.5
1
300
150
−55
to
+150
Unit
V
V
V
A
A
mW
°C
°C
Tr2
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
0 to 0.1
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 4Z
Internal Connection
3
4
5
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
h
FE
ratio
*1, 2
2
1.1
+0.3
–0.1
Tr1
1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
h
FE(Small
/Large)
*1
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
=
2 V, I
C
=
0.5 A
I
C
=
0.5 A, I
B
=
20 mA
I
C
=
0.5 A, I
B
=
50 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
25
20
12
Typ
Max
Unit
V
V
V
100
200
0.50
0.99
0.14
0.40
1.2
200
10
1.0
*3: R
on
test circuit
I
B
=
1 mA
V
B
V
V
V
B
×
1 000
(Ω)
V
A
−
V
B
1 kΩ
nA
V
V
MHz
pF
Ω
800
Collector-emitter saturation voltage
Base-emitter saturation voltage
*1
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
Collector output capacitance
(Common base, input open circuited)
ON resistanse
*3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Ratio between one and another device
f
=
1 kHz
V
=
0.3 V
V
A
R
on
=
0.4
±0.2
5˚
Publication date: December 2003
SJJ00264BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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