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BUK763R1-60E,118

Description
MOSFET N-CH 60V 120A D2PAK
Categorysemiconductor    Discrete semiconductor   
File Size714KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BUK763R1-60E,118 Overview

MOSFET N-CH 60V 120A D2PAK

BUK763R1-60E,118 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C120A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs3.1 milliohm @ 25A, 10V
Vgs (th) (maximum value) when different Id4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)114nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)8920pF @ 25V
FET function-
Power dissipation (maximum)293W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD2PAK
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
BUK763R1-60E
28 July 2016
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
2. Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
I
D
= 25 A; V
DS
= 48 V; V
GS
= 10 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
[1]
Min
-
-
-
Typ
-
-
-
Max
60
120
293
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
2.34
3.1
Dynamic characteristics
Q
GD
gate-drain charge
-
34.8
-
nC
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