PRF134 datasheet, PDF - EEWORLD Datasheet

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PRF134: DescriptionPATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size13KB，1 Pages; ManufacturerPolyfet RF Devices; Websitehttp://www.polyfet.com/; Environmental Compliance

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR

PRF134 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Polyfet RF Devices
package instruction	,
Reach Compliance Code	unknow

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polyfet rf devices

PRF134

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

"Polyfet"

process features

gold metal for greatly extended

lifetime. Low output capacitance

and high F

enhance broadbad

performance

PATENTED GOLD METALIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

5.0 Watts Single Ended

Package Style AA

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

ABSOLUTE MAXIMUM RATINGS ( T

= 25 C )

Total

Device

Dissipation

20 Watts

Junction to

Case Thermal

Resistance

10.00 C/W

Maximum

Junction

Temperature

200 C

Storage

Temperature

-65 C to 150 C

DC Drain

Current

Drain to

Gate

Voltage

70 V

Drain to

Source

Voltage

70 V

Gate to

Source

Voltage

30V

0.8 A

RF CHARACTERISTICS (

SYMBOL

Gps

PARAMETER

Common Source Power Gain

Drain Efficiency

Load Mismatch Tolerance

MIN

TYP

5.0 WATTS OUTPUT )

MAX

UNITS

20:1

TEST CONDITIONS

Idq = 0.20 A, Vds =

28.0

V, F =

Idq = 0.20 A, Vds =

28.0

V, F =

400

MHz

400

MHz

VSWR

Relative Idq = 0.20 A, Vds =

28.0

V, F =

400

MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL

Bvdss

Idss

Igss

Vgs

Rdson

Idsat

Ciss

Crss

Coss

PARAMETER

Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current

Gate Bias for Drain Current

Forward Transconductance

Saturation Resistance

Saturation Current

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

0.2

3.50

1.20

9.0

1.0

6.0

MIN

0.2

TYP

MAX

UNITS

Mho

Ohm

Amp

TEST CONDITIONS

Ids = 0.01 A, Vgs = 0V

Vds = 28.0 V, Vgs = 0V

Vds = 0V Vgs = 30V

Ids = 0.02 A, Vgs = Vds

Vds = 10V, Vgs = 5V

Vgs = 20V, Ids = 1.00 A

Vgs = 20V, Vds = 10V

Vds = 28.0 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

REVISION 08/01/1997

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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