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PRF136

Description
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size13KB,1 Pages
ManufacturerPolyfet RF Devices
Websitehttp://www.polyfet.com/
Environmental Compliance
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PRF136 Overview

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR

PRF136 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPolyfet RF Devices
package instruction,
Reach Compliance Codeunknow
polyfet rf devices
PRF136
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"
TM
process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F
t
enhance broadbad
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
15.0 Watts Single Ended
Package Style AA
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T
C
= 25 C )
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.13 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
30V
2.0 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
13
60
TYP
15.0 WATTS OUTPUT )
MAX
UNITS
dB
%
20:1
TEST CONDITIONS
Idq = 0.20 A, Vds =
28.0
V, F =
Idq = 0.20 A, Vds =
28.0
V, F =
150
MHz
150
MHz
η
VSWR
Relative Idq = 0.20 A, Vds =
28.0
V, F =
150
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
0.8
1.00
5.50
33.0
4.0
20.0
MIN
65
1.0
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids = 0.05 A, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.10 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 4.00 A
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 08/01/1997
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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