IPC302N20N3X1SA1 datasheet, PDF

IPC302N20N3X1SA1: DescriptionMOSFET N-CH 200V 1A SAWN ON FOIL; Categorysemiconductor Discrete semiconductor; File Size533KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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MOSFET N-CH 200V 1A SAWN ON FOIL

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	200V
Current - Continuous Drain (Id) at 25°C	1A（Tj）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	100 milliohms @ 2A, 10V
Vgs (th) (maximum value) when different Id	4V @ 260µA
Vgs (maximum value)	-
FET function	-
Power dissipation (maximum)	-
Operating temperature	-
Installation type	surface mount
Supplier device packaging	foil cut wafer
Package/casing	Mold

MOSFET

MetalOxideSemiconductorFieldEffectTransistor

BareDie

OptiMOS™3PowerMOSTransistorChip

IPC302N20N3

DataSheet

Rev.2.6

Final

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