SBP1535 THRU SBP1560
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
CURRENT 15.0Amperes
VOLTAGE 35 to 60 Volts
ITO-220
10 0.5
3.2
0.2
0.1
4.5 0.2
6.4 0.1
2.7 0.2
2.7 0.2
3.7
0
.
2
Mechanical Data
· Case : JEDEC ITO-220 molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 grams
2.54
0.2
0.7
2.54
0.2
0.2
13Min
1.3 0.2
15 0.3
0.5
2.4
PIN 1
PIN 3
Negative CT
Suffix "A"
0.2
0.2
PIN 1
PIN 3
Positive CT
Suffix "C"
+
CASE
PIN 2
CASE
PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at Tc=105℃ per diode/per device
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃ per diode
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 7.5A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=125℃
I
R
Rθ
JC
T
J
T
STG
15
2.5
-65 to +150
-65 to +175
V
RRM
V
RMS
V
DC
I(
AV
)
I
FRM
I
FSM
SBP1535
35
25
35
SBP1545
45
32
45
7.5
15.0
15.0
150.0
SBP1550
50
35
50
SBP1560
60
42
60
Units
Volts
Volts
Volts
Amps
Amps
Amps
Amps
V
F
0.65
1.0
0.75
Volts
mA
℃/W
℃
℃
50
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBP1535 THRU SBP1560
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
RESISTIVE OR INDUCTIVE LOAD
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
175
150
PEAK FORWARD SURGE
CURRENT (AMPERES)
125
100
75
50
25
1
10
NUMBER OF CYCLES AT 60Hz
100
T
J
=T
J
MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
20
15
10
5
0
0
50
100
150
LEAD TEMPERATURE (℃)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT (AMPERES)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
──
SBP1535-SBP1545
- - - SBP1550-SBP1560
10
T
J
=125℃
PULSE WIDTH=300
1% DUTY CYCLE
㎲
1
T
J
=125℃
1
T
J
=25℃
0.1
T
J
=75℃
0.1
──
SBP1535-SBP1545
- - - SBP1550-SBP1560
0.01
0.01
0
0.1
0.2
0.3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
J
=25℃
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.5-TYPICAL JUNCTION CAPACITANCE
4000
JUNCTION CAPACITANCE (pF)
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
TRANSIENT THERMAL IMPEDANCE,℃/ W
1000
10
100
40
0.1
──
SBP1535-SBP1545
- - - SBP1550-SBP1560
1
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
1
10
100
REVERSE VOLTAGE. VOLTS
stm32/stm8
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