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MBRF1045CT C0G

Description
DIODE ARRAY SCHOTT 45V ITO220AB
Categorysemiconductor    Discrete semiconductor   
File Size221KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

MBRF1045CT C0G Overview

DIODE ARRAY SCHOTT 45V ITO220AB

MBRF1045CT C0G Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)45V
Current - average rectification (Io) (per diode)10A
Voltage at different If - Forward (Vf800mV @ 10A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current100µA @ 45V
Operating Temperature - Junction-55°C ~ 150°C
Installation typeThrough hole
Package/casingTO-220-3 fully encapsulated, isolation tab
Supplier device packagingITO-220AB
MBRF1035CT thru MBRF10200CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Dual Common Cathode Schottky Rectifier
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25℃
I
F
= 5 A, T
J
=125℃
I
F
= 10 A, T
J
=25℃
I
F
= 10 A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
0.70
V
F
0.57
0.80
0.67
I
R
dV/dt
R
θJC
T
J
T
STG
15
0.80
0.65
0.90
0.75
0.1
10
10000
3.5
- 55 to +150
- 55 to +150
5
1035
CT
35
24
35
1045
CT
45
31
45
1050
CT
50
35
50
1060
CT
60
42
60
10
10
120
0.5
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
mA
V/μs
O
1090
CT
90
63
90
10100 10150 10200 UNIT
CT
100
70
100
CT
150
105
150
CT
200
140
200
V
V
V
A
A
A
A
V
C/W
O
O
C
C
Document Number: D1308015
Version: L13
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