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FZ1200R12HE4PHPSA1

Description
MODULE IGBT IHMB130-2
Categorysemiconductor    Discrete semiconductor   
File Size549KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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FZ1200R12HE4PHPSA1 Overview

MODULE IGBT IHMB130-2

FZ1200R12HE4PHPSA1 Parametric

Parameter NameAttribute value
IGBT typeTrench type field cutoff
Configurationsingle switch
Voltage - collector-emitter breakdown (maximum)1200V
Current - Collector (Ic) (Maximum)1825A
Vce(on) when different Vge,Ic2.1V @ 15V,1200A
Current - collector cutoff (maximum)5mA
Input capacitance (Cies) at different Vce74nF @ 25V
enterstandard
NTC thermistornone
Operating temperature-40°C ~ 150°C
Installation typeBase installation
Package/casingmodule
Supplier device packagingmodule
FZ1200R12HE4P
IHM-BModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diodeundbereitsaufgetragenem
ThermalInterfaceMaterial
IHM-BmodulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandpre-appliedThermal
InterfaceMaterial
V
CES
= 1200V
I
C nom
= 1200A / I
CRM
= 2400A
TypischeAnwendungen
• Hochleistungsumrichter
• Motorantriebe
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturT
vjop
• NiedrigeSchaltverluste
MechanischeEigenschaften
• GehäusemitCTI>400
• HoheLeistungsdichte
• IHMBGehäuse
• RoHSkonform
Thermisches Interface Material bereits
aufgetragen
TypicalApplications
• Highpowerconverters
• Motordrives
ElectricalFeatures
• ExtendedoperatingtemperatureT
vjop
• Lowswitchinglosses
MechanicalFeatures
• PackagewithCTI>400
• Highpowerdensity
• IHMBhousing
• RoHScompliant
• Pre-appliedThermalInterfaceMaterial
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.0
2016-10-17

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