1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3. I) 900 MHz OIP
3
test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone.
II) 100 MHz OIP
3
test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone.
Input
50 Ohm
Transmission
(0.5 dB loss)
DUT
50 Ohm
Transmission
including Bias
(0.5 dB loss)
Output
Block diagram of 900 MHz production test board used for V
d
, Gain, P
1dB
, OIP
3
, and NF measurements.
Circuit losses have been de-embedded from actual measurements.
2
Product Consistency Distribution Charts at 900 MHz, I
d
= 35 mA
300
250
200
150
100
50
0
15
300
250
200
150
100
50
0
16
17
GAIN (dB)
18
19
3
3.2
3.4
V
d
(V)
3.6
3.8
4
Figure 1. Gain distribution @ 35 mA.
LSL=15.5, Nominal=17, USL=18.5
Figure 2. V
d
distribution @ 35 mA.
LSL = 3.2, Nominal = 3.5, USL = 3.9
Notes:
1. Statistics distribution determined from a sample size of 500 parts taken from 3 different wafers.
2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.
ADA-4643 Typical Performance Curves
(at 25°C, unless specified otherwise)
20
20
30
15
P
1dB
(dBm)
GAIN (dB)
15
OIP
3
(dBm)
25
20
10
10
15
5
5
10
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency at Id = 35 mA.
Figure 4. P1dB vs. Frequency at Id =35 mA.
Figure 5. OIP3 vs. Frequency at Id = 35 mA.
6
70
60
18
17
16
GAIN (dB)
5
NF (dB)
Id (mA)
50
-40°C
40
30
20
10
25°C
85°C
4
15
-40°C
14
25°C
85°C
3
13
12
0
1
2
Vd (V)
3
4
5
0
10
20
30
40
50
2
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
60
70
Id (mA)
Figure 6. NF vs. Frequency at Id =35 mA.
Figure 7. Id vs. Vd and Temperature.
Figure 8. Gain vs. Id and Temperature at 900 MHz.
3
ADA-4643 Typical Performance Curves
(at 25°C, unless specified otherwise)
, continued
20
15
10
35
30
25
16
5
4
P1dB (dBm)
OIP3 (dBm)
5
-40°C
0
-5
-10
0
10
20
30
40
50
60
70
Id (mA)
25°C
85°C
NF (dB)
20
-40°C
15
10
5
0
10
20
30
40
50
60
70
Id (mA)
25°C
85°C
3
-40°C
2
1
0
0
10
20
30
40
50
60
70
Id (mA)
25°C
85°C
Figure 9. P1dB vs. Id and Temperature
at 900 MHz.
20
18
16
0.1
0.5
0.9
1.5
2.0
2.5
3
4
5
Figure 10. OIP3 vs. Id and Temperature
at 900 MHz.
25
20
15
0.1
0.5
0.9
1.5
2.0
2.5
3
4
5
6
Figure 11. NF vs. Id and Temperature
at 900 MHz.
40
35
30
0.1
0.5
0.9
1.5
10
5
0
-5
-10
OIP
3
(dBm)
P
1dB
(dBm)
GAIN (dB)
25
20
15
10
5
14
12
10
8
0
10
20
30
30
30
30
2.0
2.5
3
4
5
6
6
40
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Id (mA)
Id (mA)
Id (mA)
Figure 12. Gain vs. Id and Frequency (GHz).
Figure 13. P1dB vs. Id and Frequency (GHz).
Figure 14. OIP3 vs. Id and Frequency (GHz).
6
5.5
5
6
5
0
Id = 27 mA
Id = 35 mA
Id = 45 mA
Id = 60 mA
0
-5
-5
4.5
4
3.5
3
0
10
20
30
40
50
60
-10
ORL (dB)
IRL (dB)
NF (dB)
4
3
2.5
2.0
1.5
0.9
0.5
0.1
-10
-15
-15
-20
Id = 27 mA
Id = 3 5 mA
Id = 45 mA
Id = 60 mA
-20
70
0
2
4
6
8
10
12
Id (mA)
FREQUENCY (GHz)
-25
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 15. NF vs. Id and Frequency (GHz).
Figure 16. Input Return Loss vs. Id
and Frequency (GHz).
Figure 17. Output Return Loss vs. Id
and Frequency (GHz).
4
ADA-4643 Typical Scattering Parameters,
T
A
= 25°C, I
d
= 27 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
S
11
Mag.
0.172
0.202
0.277
0.286
0.349
0.375
0.382
0.397
0.402
0.394
0.378
0.361
0.340
0.328
0.318
0.299
0.274
0.243
0.222
0.226
0.26
0.305
0.356
Ang.
1.1
10
12.3
9.9
-2.8
-11.3
-13.8
-24.2
-34.7
-46
-58.7
-73.1
-89.3
-107.1
-124.8
-141.1
-159.7
177.3
148.7
119.9
95.4
75.2
60.1
dB
17.2
17.04
16.67
16.56
15.98
15.54
15.44
14.93
14.47
14.02
13.58
13.16
12.64
12.15
11.6
11.09
10.56
9.96
9.29
8.41
7.62
6.67
5.82
S
21
Mag.
7.246
7.113
6.814
6.726
6.292
5.984
5.918
5.581
5.29
5.021
4.775
4.55
4.284
4.05
3.803
3.584
3.371
3.149
2.914
2.632
2.406
2.155
1.954
S
12
Ang.
175.9
160.2
144.7
141.1
124.2
111.4
108.3
93.2
78.6
64.2
50
35.9
21.9
8.3
-5.4
-18.6
-32
-45.6
-59.1
-71.8
-83.7
-96.1
-107.1
S
22
Ang.
-0.8
-4.5
-7.4
-7.9
-9.3
-9.5
-9.5
-8.9
-7.8
-6.6
-5.4
-4.6
-4.9
-5.9
-8.3
-11.5
-16.5
-22.8
-30
-36.7
-43
-49.9
-57.3
K
Ang.
-4.1
-12.6
-20.4
-23.1
-37.6
-48.9
-51.7
-65.8
-81.7
-100.9
-123.8
-148.6
-169.9
173.3
158.2
141.6
123
103.6
84.8
70.1
58.4
48.4
39.7
1.1
1.1
1.1
1.1
1.1
1.2
1.2
1.2
1.3
1.3
1.3
1.3
1.3
1.2
1.2
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1
Mag.
0.093
0.091
0.088
0.087
0.083
0.080
0.08
0.078
0.078
0.079
0.082
0.087
0.094
0.102
0.112
0.124
0.138
0.150
0.161
0.168
0.177
0.187
0.195
Mag.
0.245
0.245
0.269
0.274
0.28
0.273
0.271
0.249
0.22
0.192
0.176
0.179
0.191
0.212
0.233
0.25
0.27
0.3
0.337
0.381
0.429
0.481
0.529
Notes:
1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The
output reference plane is at the end of the output lead.
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