PMPB48EP
10 September 2012
30 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
•
Trench MOSFET technology
•
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
•
Exposed drain pad for excellent thermal conduction
•
Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
•
Charging switch for portable devices
•
DC-to-DC converters
•
Power management in battery-driven portable devices
•
Hard disk and computing power management
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -10 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -10 V; I
D
= -4.7 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
-30
20
-6.8
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
40
50
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Nexperia
PMPB48EP
30 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
D
D
G
S
D
D
D
S
drain
drain
gate
source
drain
drain
drain
source
Simplified outline
1
2
3
7
6
5
4
G
S
Graphic symbol
D
8
Transparent top view
017aaa257
DFN2020MD-6 (SOT1220)
3. Ordering information
Table 3.
Ordering information
Package
Name
PMPB48EP
Description
Version
SOT1220
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Type number
4. Marking
Table 4.
Marking codes
Marking code
1U
Type number
PMPB48EP
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -10 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; T
amb
= 100 °C
I
DM
P
tot
PMPB48EP
Conditions
T
j
= 25 °C
Min
-
-20
[1]
[1]
[1]
Max
-30
20
-6.8
-4.7
-3
-19
1.7
Unit
V
V
A
A
A
A
W
2 / 14
-
-
-
-
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
All information provided in this document is subject to legal disclaimers.
[1]
-
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 September 2012
Nexperia
PMPB48EP
30 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
T
amb
= 25 °C; t ≤ 5 s
T
sp
= 25 °C
[1]
Min
-
-
-55
-55
-65
Max
3.5
12.5
150
150
150
Unit
W
W
°C
°C
°C
T
j
T
amb
T
stg
I
S
junction temperature
ambient temperature
storage temperature
Source-drain diode
source current
[1]
T
amb
= 25 °C
2
[1]
-
-1.8
A
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMPB48EP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 September 2012
3 / 14
Nexperia
PMPB48EP
30 V, single P-channel Trench MOSFET
-10
2
I
D
(A)
-10
Limit R
DSon
= V
DS
/I
D
017aaa772
t
p
= 100 µs
t
p
= 1 ms
-1
DC; T
sp
= 25 °C
-10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 10 ms
t
p
= 100 ms
-10
-2
-10
-2
-10
-1
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
in free air
in free air; t ≤ 5 s
[1]
[2]
[2]
Min
-
-
-
-
Typ
235
67
33
5
Max
270
74
36
10
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
2
PMPB48EP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 September 2012
4 / 14
Nexperia
PMPB48EP
30 V, single P-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
017aaa542
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.01
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
017aaa543
duty cycle = 1
0.75
0.33
0.5
0.25
0.1
10
0.2
0.05
0
1
10
-3
0.02
0.01
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
I
GSS
PMPB48EP
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
Conditions
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= -30 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
Min
-30
-1
-
-
Typ
-
-1.5
-
-
©
Max
-
-2.5
-1
-100
Unit
V
V
µA
nA
5 / 14
Static characteristics
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 September 2012
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