Advance Technical Information
XPT
TM
650V IGBT
GenX4
TM
w/ Diode
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
IXXH30N65B4D1
V
CES
=
I
C110
=
V
CE(sat)
t
fi(typ)
=
650V
30A
2.0V
50ns
TO-247 AD
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
F110
I
CM
SSOA
(RBSOA)
t
sc
(SCSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GE
= 1M
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C (Chip Capability)
= 110°C
= 110°C
= 25°C, 1ms
Maximum Ratings
650
650
±20
±30
70
30
40
146
I
CM
= 60
@V
CE
V
CES
10
230
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
V
V
V
V
A
A
A
A
A
μs
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Features
G
C
E
Tab
G = Gate
E = Emitter
C
= Collector
Tab = Collector
V
GE
= 15V, T
VJ
= 150°C, R
G
= 15
Clamped Inductive Load
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C
R
G
= 82, Non Repetitive
T
C
= 25°C
Optimized for 5-30kHz Switching
Square RBSOA
Anti-Parallel Diode
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250A, V
GE
= 0V
= 250A, V
CE
= V
GE
T
J
= 150C
V
CE
= 0V, V
GE
=
20V
I
C
= 30A, V
GE
= 15V, Note 1
T
J
= 150C
Characteristic Values
Min.
Typ.
Max.
650
4.0
6.5
20
750
100
1.66
1.87
2.10
V
V
A
A
nA
V
V
V
CE
= V
CES
, V
GE
= 0V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2016 IXYS CORPORATION, All Rights Reserved
DS100756A(12/16)
IXXH30N65B4D1
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
25
42
1460
146
22
52
10
22
20
65
1.04
150
50
0.73
19
46
1.87
146
60
1.07
0.21
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.65 °C/W
°C/W
1 - Gate
2,4 - Collector
3 - Emitter
TO-247 (IXXH) Outline
g
fs
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
= 30A, V
CE
= 10V, Note 1
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 30A, V
GE
= 15V, V
CE
= 0.5 • V
CES
Inductive load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 15
Note 2
Inductive load, T
J
= 150°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 15
Note 2
Reverse Diode (FRED)
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
V
F
I
RM
t
rr
R
thJC
I
F
= 30A, V
GE
= 0V, Note 1
I
F
= 30A, V
GE
= 0V, -di
F
/dt = 500A/μs,
V
R
= 400V, T
J
= 150°C
Characteristic Values
Min. Typ.
Max.
2.5
T
J
= 150°C
1.35
14
185
V
V
A
ns
0.75 °C/W
Notes:
1. Pulse test, t
300μs, duty cycle, d
2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXXH30N65B4D1
Fig. 1. Output Characteristics @ T
J
= 25ºC
60
V
GE
= 15V
13V
12V
11V
40
120
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
50
100
V
GE
= 15V
14V
13V
I
C
- Amperes
30
9V
20
8V
I
C
-
Amperes
10V
80
60
12V
11V
40
10V
9V
10
20
7V
0
0.5
1
1.5
2
2.5
3
8V
7V
0
5
10
15
20
25
30
0
0
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
60
V
GE
= 15V
14V
13V
2.0
1.8
12V
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
50
I
C
- Amperes
40
11V
V
CE(sat)
- Normalized
1.6
1.4
1.2
I
C
= 60A
30
10V
20
I
C
= 30A
1.0
0.8
0.6
I
C
= 15A
9V
10
8V
7V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
-50
-25
0
25
50
75
100
125
150
175
V
CE
- Volts
T
J
- Degrees Centigrade
5.0
4.5
4.0
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
T
J
= 25ºC
60
Fig. 6. Input Admittance
50
T
J
= - 40ºC
25ºC
I
C
-
Amperes
V
CE
- Volts
3.5
3.0
2.5
2.0
1.5
1.0
7
8
9
10
11
15A
12
13
14
15
30A
I
C
= 60A
40
T
J
= 150ºC
30
20
10
0
4
5
6
7
8
9
10
11
12
V
GE
- Volts
V
GE
- Volts
© 2016 IXYS CORPORATION, All Rights Reserved
IXXH30N65B4D1
Fig. 7. Transconductance
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
150ºC
T
J
= - 40ºC
14
25ºC
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
55
16
V
CE
= 325V
I
C
= 30A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
I
C
- Amperes
V
GE
- Volts
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
70
Fig. 10. Reverse-Bias Safe Operating Area
f
= 1 MHz
60
Capacitance - PicoFarads
Cies
50
1,000
I
C
- Amperes
40
30
20
Coes
100
Cres
T
J
= 150ºC
10
0
R
G
= 15
Ω
dv / dt < 10V / ns
10
0
5
10
15
20
25
30
35
40
100
200
300
400
500
600
700
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
1
Z
(th)JC
- K / W
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH30N65B4D1
3.0
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
E
off
E
on
10
3.0
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
E
off
E
on
6
2.5
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
2.5
8
2.0
R
G
= 15
Ω
V
GE
= 15V
V
CE
= 400V
5
E
off
- MilliJoules
2.0
I
C
= 60A
6
E
off
- MilliJoules
4
E
on
- MilliJoules
E
on
- MilliJoules
1.5
T
J
= 150ºC
3
1.5
4
1.0
T
J
= 25ºC
2
1.0
I
C
= 30A
2
0.5
1
0.5
15
20
25
30
35
40
45
50
55
0
0.0
15
20
25
30
35
40
45
50
55
60
0
R
G
- Ohms
I
C
- Amperes
2.4
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
E
off
E
on
I
C
= 60A
6
160
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
t
fi
V
CE
= 400V
400
2.0
R
G
= 15
Ω
V
GE
= 15V
V
CE
= 400V
5
140
120
t
d(off)
T
J
= 150ºC, V
GE
= 15V
350
300
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
E
off
- MilliJoules
1.6
4
E
on
- MilliJoules
100
80
250
200
I
C
= 30A
150
100
1.2
I
C
= 30A
3
I
C
= 60A
0.8
2
60
40
0.4
1
0.0
25
50
75
100
125
0
150
20
15
20
25
30
35
40
45
50
55
50
T
J
- Degrees Centigrade
R
G
- Ohms
220
200
180
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
t
fi
V
CE
= 400V
160
140
120
160
140
120
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
t
fi
V
CE
= 400V
180
170
160
t
d(off)
t
d(off)
R
G
= 15
Ω
, V
GE
= 15V
R
G
= 15
Ω
, V
GE
= 15V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
t
f i
- Nanoseconds
160
140
120
100
80
60
15
20
25
30
35
40
45
50
55
60
100
80
60
40
20
0
100
80
I
C
= 30A
60
I
C
= 60A
40
20
0
25
50
75
100
125
150
140
130
120
110
100
150
T
J
= 150ºC
T
J
= 25ºC
I
C
- Amperes
T
J
- Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
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