IRHY9130CMPBF datasheet, PDF - EEWORLD Datasheet

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IRHY9130CMPBF: DescriptionPower Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA; CategoryThe transistor; File Size117KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRHY9130CMPBF Overview

Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

IRHY9130CMPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	75 W
Maximum pulsed drain current (IDM)	44 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	140 ns
Maximum opening time (tons)	100 ns
Base Number Matches	1

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PD - 91400C

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-257AA)

Product Summary

Part Number Radiation Level

IRHY9130CM 100K Rads (Si)

IRHY93130CM 300K Rads (Si)

DS(on)

0.30Ω

-11A

IRHY9130CM

JANSR2N7382

100V, P-CHANNEL

REF: MIL-PRF-19500/615

RAD Hard HEXFET

TECHNOLOGY

™

QPL Part Number

JANSR2N7382

JANSF2N7382

International Rectifier’s RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

TO-257AA

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = -12V, TC = 25°C

ID @ VGS = -12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

-11

-7.0

-44

0.6

±20

150

-11

7.5

-16

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

300 (0.063 in (1.6mm)from case for 10s)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

06/13/02

IRHY9130CMPBF Related Products

	IRHY9130CMPBF	IRHY93130CMPBF
Description	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Other features	RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	150 mJ	150 mJ
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	11 A	11 A
Maximum drain-source on-resistance	0.35 Ω	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA	TO-257AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	44 A	44 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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