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BUK7M17-80EX

Description
MOSFET N-CH 80V 43A LFPAK33
CategoryDiscrete semiconductor    The transistor   
File Size723KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK7M17-80EX Overview

MOSFET N-CH 80V 43A LFPAK33

BUK7M17-80EX Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts8
Manufacturer packaging codeSOT1210
Reach Compliance Codecompliant
Samacsys DescriptionMOSFET N-CH 80V 17 STD LEVEL
Avalanche Energy Efficiency Rating (Eas)47.4 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)43 A
Maximum drain-source on-resistance0.017 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)173 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK7M17-80E
19 September 2016
N-channel 80 V, 17 mΩ standard level MOSFET in LFPAK33
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
I
D
= 10 A; V
DS
= 64 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
9.7
-
nC
Min
-
-
-
Typ
-
-
-
Max
80
43
79
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
14
17
Dynamic characteristics
Q
GD
gate-drain charge

BUK7M17-80EX Related Products

BUK7M17-80EX 934070044115
Description MOSFET N-CH 80V 43A LFPAK33 MOSFET N-CH 80V MLFPAK
Maker Nexperia Nexperia
Reach Compliance Code compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 47.4 mJ 47.4 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 80 V 80 V
Maximum drain current (ID) 43 A 43 A
Maximum drain-source on-resistance 0.017 Ω 0.017 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G4 R-PSSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 173 A 173 A
Guideline AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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