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NVMFS5C460NLAFT1G

Description
MOSFET N-CH 40V 21A 78A 5DFN
Categorysemiconductor    Discrete semiconductor   
File Size80KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NVMFS5C460NLAFT1G Overview

MOSFET N-CH 40V 21A 78A 5DFN

NVMFS5C460NLAFT1G Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)40V
Current - Continuous Drain (Id) at 25°C21A(Ta),78A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs4.5 milliohms @ 35A, 10V
Vgs (th) (maximum value) when different Id2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)23nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1300pF @ 25V
FET function-
Power dissipation (maximum)3.6W(Ta), 50W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packaging5-DFN(5x6)(8-SOFL)
Package/casing8-PowerTDFN, 5-lead
NVMFS5C460NL
Power MOSFET
40 V, 4.5 mW, 78 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5C460NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
78
55
50
25
21
15
3.6
1.8
520
−55 to
+ 175
56
107
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
www.onsemi.com
V
(BR)DSS
40 V
R
DS(ON)
MAX
4.5 mW @ 10 V
I
D
MAX
78 A
7.2 mW @ 4.5 V
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 5 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXXXX = 5C460L
XXXXXX =
(NVMFS5C460NL) or
XXXXXX =
460LWF
XXXXXX =
(NVMFS5C460NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
3.0
42
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2016
1
November, 2017 − Rev. 5
Publication Order Number:
NVMFS5C460NL/D

NVMFS5C460NLAFT1G Related Products

NVMFS5C460NLAFT1G NVMFS5C460NL NVMFS5C460NLWFAFT1G
Description MOSFET N-CH 40V 21A 78A 5DFN Single N−Channel Power MOSFET MOSFET N-CH 40V 21A 78A 5DFN
FET type N channel - N channel
technology MOSFET (metal oxide) - MOSFET (metal oxide)
Drain-source voltage (Vdss) 40V - 40V
Current - Continuous Drain (Id) at 25°C 21A(Ta),78A(Tc) - 21A(Ta),78A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V - 4.5V,10V
Rds On (maximum value) when different Id, Vgs 4.5 milliohms @ 35A, 10V - 4.5 milliohms @ 35A, 10V
Vgs (th) (maximum value) when different Id 2V @ 250µA - 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 23nC @ 10V - 23nC @ 10V
Vgs (maximum value) ±20V - ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1300pF @ 25V - 1300pF @ 25V
Power dissipation (maximum) 3.6W(Ta), 50W(Tc) - 3.6W(Ta), 50W(Tc)
Operating temperature -55°C ~ 175°C(TJ) - -55°C ~ 175°C(TJ)
Installation type surface mount - surface mount
Supplier device packaging 5-DFN(5x6)(8-SOFL) - 5-DFN(5x6)(8-SOFL)
Package/casing 8-PowerTDFN, 5-lead - 8-PowerTDFN, 5-lead
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