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RD3L080SNTL1

Description
NCH 60V 8A POWER MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size3MB,16 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RD3L080SNTL1 Overview

NCH 60V 8A POWER MOSFET

RD3L080SNTL1 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C8A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4V,10V
Rds On (maximum value) when different Id, Vgs80 milliohms @ 8A, 10V
Vgs (th) (maximum value) when different Id2.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)9.4nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)380pF @ 10V
FET function-
Power dissipation (maximum)15W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingTO-252
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
RD3L080SN
  
Nch 60V 8A Power MOSFET
  
l
Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
60V
80mΩ
±8A
15W
DPAK
TO-252
 
           
 
l
Inner circuit
l
Features
1) Low on - resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
l
Packaging specifications
Packing
Reel size (mm)
l
Application
Embossed
Tape
330
16
2500
TL
TL1
RD3L080SN
Unit
V
A
A
V
W
Switching
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
l
Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D*1
I
DP*2
V
GSS
P
D*3
T
j
T
stg
Value
60
±8
±16
±20
15
150
-55 to +150
                                              
                                                                                         
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
1/12
20180619 - Rev.004
   
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