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BUK7K23-80EX

Description
MOSFET 2 N-CH 80V 17A LFPAK56D
Categorysemiconductor    Discrete semiconductor   
File Size250KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK7K23-80EX Overview

MOSFET 2 N-CH 80V 17A LFPAK56D

BUK7K23-80EX Parametric

Parameter NameAttribute value
FET type2 N-channel (dual)
FET functionstandard
Drain-source voltage (Vdss)80V
Current - Continuous Drain (Id) at 25°C17A(Ta)
Rds On (maximum value) when different Id, Vgs23 milliohms @ 10A, 10V
Vgs (th) (maximum value) when different Id4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)22.8nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value)1542pF @ 25V
Power - Max53W
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Package/casingSOT-1205,8-LFPAK56
Supplier device packagingLFPAK56D
BUK7K23-80E
17 August 2017
Dual N-channel 80 V, 23 mΩ standard level MOSFET
Product data sheet
1. General description
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for
use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
I
D
P
tot
R
DSon
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
I
D
= 10 A; V
DS
= 64 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
Min
-
-
-
-
Typ
-
-
-
17.6
Max
80
17
53
23
Unit
V
A
W
Limiting values FET1 and FET2
Static characteristics FET1 and FET2
Dynamic characteristics FET1 and FET2
Q
GD
-
7.5
-
nC
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