EEWORLDEEWORLDEEWORLD

Part Number

Search

BUK9K20-80EX

Description
MOSFET 2 N-CH 80V 23A LFPAK56D
Categorysemiconductor    Discrete semiconductor   
File Size249KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BUK9K20-80EX Online Shopping

Suppliers Part Number Price MOQ In stock  
BUK9K20-80EX - - View Buy Now

BUK9K20-80EX Overview

MOSFET 2 N-CH 80V 23A LFPAK56D

BUK9K20-80EX Parametric

Parameter NameAttribute value
FET type2 N-channel (dual)
FET functionlogic level gate
Drain-source voltage (Vdss)80V
Current - Continuous Drain (Id) at 25°C23A(Ta)
Rds On (maximum value) when different Id, Vgs17 milliohms @ 10A, 10V
Vgs (th) (maximum value) when different Id2.1V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)25.5nC @ 5V
Input capacitance (Ciss) at different Vds (maximum value)3462pF @ 25V
Power - Max68W
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Package/casingSOT-1205,8-LFPAK56
Supplier device packagingLFPAK56D
BUK9K20-80E
17 August 2017
Dual N-channel 80 V, 20 mΩ logic level MOSFET
Product data sheet
1. General description
Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for
use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
I
D
P
tot
R
DSon
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
-
Typ
-
-
-
14.2
Max
80
23
68
19.4
Unit
V
A
W
Limiting values FET1 and FET2
Static characteristics FET1 and FET2
Dynamic characteristics FET1 and FET2
Q
GD
I
D
= 10 A; V
DS
= 64 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
9.4
-
nC
Classic article: Instrumentation amplifier application guide
Classic article: Instrumentation amplifier application guide...
songbo Automotive Electronics
How to use XBYTE to read and write DS12B887
The 51 MCU and DS12B8 are connected in bus mode, where the CS chip select segment is connected to Y0 of the decoder 74HC154, and the address lines A\B\C\D of 74HC154 are connected to P2_3, P2_4, P2_5,...
moseslin Embedded System
128X64LCD driver
Hey guys, is there any C code for 128X64LCD driver? I can't display any words, and I don't know why. I use 89C51+128X64LCD. Please help me. My QQ is 745403376. Thank you....
eeworld.com MCU
Please help me analyze a problem, a few sentences that always appear when wince starts.
[img]d:\45.jpg[/img]Please help me analyze a problem. There are a few sentences that always appear when WinCE starts. I have not modified the source code in public. But this problem occurs every time ...
kenji156 Embedded System
It's graduation season again
As the college entrance examination is about to begin, the students who are about to enter the examination room will face a torment and test. For those of us who have already left the college entrance...
yijindz8 Talking

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1251  1930  1997  470  1340  26  39  41  10  27 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号