BST80-TAPE-7 datasheet, PDF - EEWORLD Datasheet

BST80-TAPE-7: DescriptionTRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal; CategoryThe transistor; File Size76KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BST80-TAPE-7 Overview

TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	0.5 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	12 pF
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	BST80-TAPE-7	BST80-TAPE-13
Description	TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal	TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	80 V
Maximum drain current (ID)	0.5 A	0.5 A
Maximum drain-source on-resistance	3 Ω	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	12 pF	12 pF
JESD-30 code	R-PSSO-F3	R-PSSO-F3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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