TB6674PG/FG/FAG
TOSHIBA BiCD Integrated Circuit
Silicon Monolithic
TB6674PG, TB6674FG, TB6674FAG
Stepping Motor Driver IC
TB6674PG, TB6674FG, and TB6674FAG are stepping motor
driver ICs with MOS output transistors.
The ICs can control two-phase stepping motor forward and
reverse by bipolar driving. They have a power-saving circuit and
a standby circuit.
TB6674PG
Features
They are similar substituting products of TA7774PG,
TA7774FG, and TA7774FAG. Both products have same
packages and same pin assignments.
One-chip two-phase bipolar stepping motor driver (including
two bridge drivers)
Power saving operation is available.
Standby operation is available.
Current consumption
≤
20
μA
(typ.)
Built-in punch-through current restriction circuit for system
reliability and noise suppression.
TTL-compatible inputs INA, INB, PS, and Vs2
B terminals
ON resistance PS = L : 2.9
Ω
(Typ.)
PS = H: 7.9
Ω
(Typ.)
High driving ability.
<TB6674PG/FG>
: I
O (START)
350 mA (MAX.) : V
S1
ENABLE
: I
O (HOLD)
100 mA (MAX.) : V
S2
ENABLE
<TB6674FAG>
: I
O (START)
100 mA (MAX.) : V
S1
ENABLE
: I
O (HOLD)
50 mA (MAX.) : V
S2
ENABLE
Typical PKG
DIP16 pin, HSOP16 pin, SSOP16 pin
GND terminal = HEAT SINK
Process :BiCD0.6 (30 V)
Over current shutdown circuit (ISD).
Thermal shutdown circuit (TSD).
Undervoltage lockout circuit (UVLO).
Pull-down resistance for input terminal (250 kΩ).
The following conditions apply to solderability:
About solderability, following conditions were confirmed
(1)Use of Sn-37Pb solder Bath
·solder bath temperature: 230℃
·dipping time: 5 seconds
·the number of times: once
·use of R-Type flux
(2)Use of Sn-3.0Ag-0.5Cu solder Bath
·solder bath temperature: 245℃
·dipping time: 5 seconds
·the number of times: once
·use of R-type flux
TB6674FAG
TB6674FG
Weight
DIP16-P-300-2.54A: 1.11 g (typ.)
HSOP16-P-300-1.00: 0.50 g (typ.)
SSOP16-P-225-1.00A: 0.14 g (typ.)
1
Ver.3
2010-07-07
TB6674PG/FG/FAG
Block Diagram
Bridge
driver
Bridge
driver
TB6674PG/FAG
/
TB6674FG
Note: TB6674FG: Terminals 2, 7, 12, and 13 are NC.
TB6674FG: The heat fin is connected to GND.
Pin Description
Pin No.
1 / (1)
2 / (3)
3 / (4)
4 / (F)
5 / (F)
6 / (5)
7 / (6)
8 / (8)
9 / (9)
10 / (10)
11 / (11)
Symbol
V
S2 A
V
CC
IN A
GND
GND
IN B
PS
V
S2 B
V
S1 B
φB
Functional Description
Low-voltage power supply terminal
Power voltage supply terminal for control
A-ch forward rotation / reverse rotation signal input
terminal, Truth Table 1
GND terminal
GND terminal
B-ch forward rotation / reverse rotation signal input
terminal, Truth Table 1
Power saving signal input terminal
Standby signal input terminal, Truth Table 2
High-voltage power supply terminal
Output B
Φ
B
GND
GND
Φ
A
φA
V
S1 A
Output B
GND terminal
GND terminal
Output
Α
Output A
High-voltage power supply terminal.
12 / (F)
13 / (F)
14 / (14)
15 / (15)
16 / (16)
Pin No. of ( ) :TB6674FG
2
Ver.3
2010-07-07
TB6674PG/FG/FAG
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
V
CC
Supply voltage
V
S1
V
S2
TB6674PG
TB6674FG
Output current
TB6674FAG
I
O (PEAK)
I
O (START)
I
O (HOLD)
I
O (PEAK)
I
O (START)
I
O (HOLD)
Input voltage
TB6674PG
Power
dissipation
P
D
V
IN
6.0
24.0
Up to V
CC
±400
±350
±100
±200
±100
±50
Up to V
CC
1.4 (Note 1)
2.7 (Note 2)
0.9 (Note 3)
1.4 (Note 4)
0.78 (Note 5)
W
V
mA
V
TB6674FG
TB6674FAG
Operating temperature
Storage temperature
T
opr
T
stg
－
30 to 75
－
55 to 150
°C
°C
Note 1: IC only
Note 2: This value is obtained if mounting is on a 50 mm × 50 mm × 0.8 mm PCB, 60 % or more of which is occupied
by copper.
Note 3: IC only
Note 4: This value is obtained if mounting is on a 60 mm × 30 mm × 1.6 mm PCB, 50 % or more of which is occupied
by copper.
Note 5: This value is obtained if mounting is on a 50 mm × 50 mm × 1.6 mm PCB, 40 % or more of which is occupied
by copper.
Operating Conditions
(Ta = 25°C)
Characteristic
Symbol
V
CC
Supply voltage
V
S1
V
S2A
TB6674PG
Output current
TB6674FG
TB6674FAG
Input voltage
Maximum frequency of input pulse
Minimum resolution of input pulse
I
O
Min.
4.5
8.0
2.7
－
Typ.
－
－
－
－
Max.
5.5
22.0
5.5
±350
Unit
V
mA
I
O
V
IN
－
－
－
－
－
±100
V
CC
25
－
0
－
V
kHz
μs
f
IN
t
w
20
Value of ON resistance tends to increase when the difference between Vs1 and Vs2A becomes 5 V or less.
4
Ver.3
2010-07-07
TB6674PG/FG/FAG
Electrical Characteristics
(Unless otherwise specified, Ta = 25°C, V
CC
= 5 V, V
S1
= 12 V,
and V
S2A
= 5 V)
Characteristic
Symbol
Test
Cir−
cuit
Test Condition
Min
Typ.
Max
Unit
I
CC1
Supply current
I
CC2
I
CC3
High
Input voltage
Low
Input hysteresis voltage*
V
IN L
V
INhys
I
IN (H)
I
IN (L)
TB6674PG
Output ON
resistance
(Note)
TB6674FG
R
on 1H
R
on 2H
R
on L
R
on 1H
TB6674FAG
R
on 2H
R
on L
Diode forward voltage
V
F U
V
F L
t
pLH
t
pHL
TSD
TSDhys
2
3
2
2
3
2
4
1
V
IN H
―
1
PS: H, V
S2B
: H
PS: L, V
S2B
: H
V
S2B
: L
―
―
―
2.0
3
3
1
―
―
90
20
⎯
5
5
20
Vcc
mA
μA
V
INA, INB, PS, Vs2B
－
0.2
⎯
0.8
⎯
mV
μ
A
μ
A
Input current
1
INA, INB, PS, Vs2B
V
IN
=
5.0 V
Built in pull-down resistance.
V
IN
=
0 V
PS: L, V
S2B
: H
PS: H, V
S2B
: H
V
S2B
: H
PS: L, V
S2B
: H
PS: H, V
S2B
: H
V
S2B
: H
I
F
= 350 mA, PS = L
I
OUT
= 400 mA
I
OUT
= 100 mA
I
OUT
= 400 mA
I
OUT
= 200 mA
I
OUT
= 50 mA
I
OUT
= 200 mA
5
⎯
38
1
5
16
3.5
5
16
3.5
2.5
2.2
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
2
7
0.9
2
7
0.9
1.2
1.0
0.5
0.5
160
20
Ω
V
Delay time
Thermal shutdown circuit*
TSD
hysteresis *
―
―
―
IN
− φ
(Design target only)
(Design target only)
μs
°C
°C
*
：
Toshiba does not implement testing before shipping.
5
Ver.3
2010-07-07
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