BLM9D2325-20AB
LDMOS 2-stage integrated Doherty MMIC
Rev. 1 — 24 July 2017
Product data sheet
1. Product profile
1.1 General description
The BLM9D2325-20AB is a 2-stage fully integrated Doherty MMIC solution using
Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device,
input splitter and output combiner are integrated in a single package. This multiband
device is
perfectly suited as a final device in massive MIMO or small cell applications in
the frequency range
from 2300 MHz to 2500 MHz. Available in PQFN outline.
Table 1.
Application performance
Typical RF performance at T
case
= 25
C; I
Dq
= 39 mA (driver and final stages);
V
GSq(peaking)
= V
GSq(carrier)
0.50 V. Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at
0.01 % probability on CCDF.
Test signal
single carrier W-CDMA
f
(MHz)
2350
V
DS
(V)
28
P
L(AV)
(W)
3.55
G
p
(dB)
27.1
D
(%)
42.1
ACPR
5M
(dBc)
36.3
1.2 Features and benefits
Integrated input splitter
Integrated output combiner
Very high efficiency thanks to asymmetry
Designed for broadband operation (frequency 2300 MHz to 2500 MHz)
Independent control of carrier and peaking bias
Integrated ESD protection
Excellent thermal stability
Source impedance 50
;
high power gain
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base
stations in the 2300 MHz to 2500 MHz frequency range.
BLM9D2325-20AB
LDMOS 2-stage integrated Doherty MMIC
2. Pinning information
2.1 Pinning
pin 1
index
RF_OUT V
DS2
20 19 18 17 16
15
14
13
12
6
V
GS(peak)
7
V
GS(carr)
8
11
9 10
V
GS(peak)
n.c.
n.c.
n.c.
n.c.
V
DS1
1
2
3
4
5
n.c.
n.c.
n.c.
n.c.
V
DS1
RF_IN
V
GS(carr)
amp00274
Transparent top view
The exposed backside of the package is the ground terminal of the device.
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
n.c.
n.c.
n.c.
n.c.
V
DS1
V
GS(peak)
V
GS(carr)
RF_IN
V
GS(carr)
V
GS(peak)
V
DS1
n.c.
n.c.
n.c.
n.c.
RF_OUT/V
DS2
RF_OUT/V
DS2
RF_OUT/V
DS2
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Description
not connected
not connected
not connected
not connected
drain-source voltage of driver stages
gate-source voltage of peaking
gate-source voltage of carrier
RF input
gate-source voltage of carrier
gate-source voltage of peaking
drain-source voltage of driver stages
not connected
not connected
not connected
not connected
RF output / drain-source voltage of final stages
RF output / drain-source voltage of final stages
RF output / drain-source voltage of final stages
BLM9D2325-20AB
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 24 July 2017
2 of 16
BLM9D2325-20AB
LDMOS 2-stage integrated Doherty MMIC
Table 2.
Symbol
RF_OUT/V
DS2
RF_OUT/V
DS2
GND
Pin description
…continued
Pin
19
20
flange
Description
RF output / drain-source voltage of final stages
RF output / drain-source voltage of final stages
RF ground
3. Ordering information
Table 3.
Ordering information
Package
Name
BLM9D2325-20AB
PQFN20
Description
plastic thermal enhanced quad flat package;
no leads; 20 terminals; body 8.0 x 8.0 x 2.1 mm
Version
SOT1462-1
Type number
4. Block diagram
V
GS(peak)
V
DS1
Bias peak
RF_IN
RF_OUT V
DS2
V
GS(carr)
Bias carr
amp00275
Fig 2.
Block diagram
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
175
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF
calculator.
BLM9D2325-20AB
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 24 July 2017
3 of 16
BLM9D2325-20AB
LDMOS 2-stage integrated Doherty MMIC
6. Thermal characteristics
Table 5.
Thermal characteristics
Measured for total device.
Symbol Parameter
R
th(j-c)
thermal resistance from junction to
case
Conditions
T
case
= 90
C;
P
L(AV)
= 3 W
T
case
= 90
C;
P
L(AV)
= 1.25 W
[1]
[1]
Value Unit
12
17
K/W
K/W
[1]
When operated with a 1-carrier W-CDMA with PAR = 8 dB.
7. Characteristics
Table 6.
DC characteristics
T
case
= 25
C; unless otherwise specified.
Symbol
Carrier
V
GSq
I
GSS
Peaking
I
GSS
I
DSS
I
DSS
gate leakage current
drain leakage current
drain leakage current
V
GS
= 1 V; V
DS
= 0 V
V
GS
= 0 V; V
DS
= 28 V
V
GS
= 0 V; V
DS
= 28 V
-
-
-
-
-
-
140
1.4
1.4
nA
A
A
Final stages
Driver stages
gate-source quiescent voltage
gate leakage current
V
DS
= 28 V; I
D
= 37 mA
V
GS
= 1 V; V
DS
= 0 V
1.65 2.2
-
-
2.75 V
140
nA
Parameter
Conditions
Min
Typ Max Unit
Table 7.
RF Characteristics
Typical RF performance at T
case
= 25
C; V
DS
= 28 V; I
Dq
= 37 mA (carrier);
V
GSq(peaking)
= V
GSq(carrier)
0.5 V; P
L
= 2 W; f = 2.5 GHz. Unless otherwise specified, measured in
an Ampleon production circuit.
Symbol
G
p
D
RL
in
P
L(3dB)
Parameter
power gain
drain efficiency
input return loss
output power at 3 dB gain compression
P
L
= 2 W
P
L
= P
L(3dB)
Conditions
Min
26.5
35
45
-
43
Typ
28
39
50
14
Max
29.5
-
-
10
Unit
dB
%
%
dB
dBm
Test signal: pulsed CW
43.4 -
BLM9D2325-20AB
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 24 July 2017
4 of 16
BLM9D2325-20AB
LDMOS 2-stage integrated Doherty MMIC
8. Application information
Table 8.
Typical performance
Test signal: 1-carrier W-CDMA;T
case
= 25
C; V
DS
= 28 V; I
Dq
= 39 mA (driver and final stages); test model 1; 64 DPCH;
PAR = 9.9 dB at 0.01 % probability CCDF; unless otherwise specified, measured in an Ampleon 2300 MHz to 2400 MHz
frequency band asymmetrical Doherty application circuit.
Symbol
P
L(3dB)
Parameter
output power at 3 dB gain compression
Conditions
f = 2350 MHz
f = 2350 MHz; at 3 dB
compression point
8 dB OBO (P
L(AV)
= 35.5 dBm);
f = 2350 MHz
P
L(AV)
= 35.5 dBm; f = 2350 MHz
P
L(AV)
= 38.5 dBm set to obtain
IMD3 =
30
dBc; 2-tone CW;
f = 2350 MHz
P
L(AV)
= 35.5 dBm; f = 2300 MHz
to 2400 MHz
P
L(AV)
= 35.5 dBm; f = 2350 MHz
f = 2350 MHz
T
case
=
40 C;
f = 0.15 GHz to
5 GHz
[3]
[1]
[2]
Min Typ
-
-
-
-
-
43.3
Max Unit
-
dBm
%
dB
MHz
s21
/
s21(norm)
normalized phase response
D
G
p
B
video
drain efficiency
power gain
video bandwidth
14.2
-
42.1
27.1
216
-
-
-
G
flat
ACPR
5M
G/T
K
[1]
[2]
[3]
gain flatness
adjacent channel power ratio (5M)
gain variation with temperature
Rollett stability factor
-
-
-
-
0.7
-
dB
dBc
dB/C
36.3
-
0.04
>1.7
-
-
Pulsed CW power sweep measurement ( = 10 %, t
p
= 100
s).
25 ms CW power sweep measurement.
S-parameters measured with load-pull jig.
BLM9D2325-20AB
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 24 July 2017
5 of 16
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