EEWORLDEEWORLDEEWORLD

Part Number

Search

S1KW16C-2P

Description
DIODE GEN PURP 16KV 3A
Categorysemiconductor    Discrete semiconductor   
File Size60KB,2 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
Download Datasheet Parametric View All

S1KW16C-2P Online Shopping

Suppliers Part Number Price MOQ In stock  
S1KW16C-2P - - View Buy Now

S1KW16C-2P Overview

DIODE GEN PURP 16KV 3A

S1KW16C-2P Parametric

Parameter NameAttribute value
Diode configuration1 pair in series
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)16000V
Current - average rectification (Io) (per diode)3A
Voltage at different If - Forward (Vf16V @ 3A
speedStandard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)2µs
Current at different Vr - Reverse leakage current1µA @ 16000V
Operating Temperature - Junction-55°C ~ 150°C
Installation typeBase installation
Package/casingmodule
Supplier device packaging-
STANDARD RECOVERY
HIGH POWER DOUBLER
AND CENTER TAPS
January 9, 1998
S1KW8C-1* S1KW16C-2*
S1KW24C-3* S1KW32C-4*
S1KW40C-5* S1KW48C-6*
TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com
© 1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 837  2391  2073  1925  919  17  49  42  39  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号